公开(公告)号：US20240292627A1

公开(公告)日：2024-08-29

申请号：US18659312

申请日：2024-05-09

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Takuya MUROOKA ,  Peng ZHANG ,  Kazuki ISOZUMI ,  Shinsuke YADA ,  Motoo OHAGA ,  Satoshi SHIMIZU

IPC: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

Abstract: A memory device includes at least one alternating stack of insulating layers and electrically conductive layers overlying a source layer, a memory opening vertically extending through the at least one alternating stack, and a memory opening fill structure located in the memory opening and containing a vertical stack of memory elements and a vertical semiconductor channel. The memory opening fill structure includes a lateral protrusion having a tapered sidewall surface such that a lateral extent of the lateral protrusion decreases with a vertical distance from the source layer. One of the electrically conductive layers of the at least one alternating stack is a taper-containing electrically conductive layer that is located at a level of the lateral protrusion of the memory opening fill structure.

公开(公告)号：US20230269939A1

公开(公告)日：2023-08-24

申请号：US17679335

申请日：2022-02-24

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ramy Nashed Bassely SAID ,  Senaka KANAKAMEDALA ,  Raghuveer S. MAKALA ,  Peng ZHANG ,  Yanli ZHANG

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11565

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening fill structure including a vertical semiconductor channel and a memory film. The memory film includes a tunneling dielectric layer in contact with the vertical semiconductor channel, a first vertical stack of first dielectric oxide material portions located at levels of the insulating layers and including a dielectric oxide material of a first element, and a second vertical stack of second dielectric oxide material portions located at levels of the electrically conductive layers and including a mixed dielectric oxide material that is a dielectric oxide material of the first element and a second element.

公开(公告)号：US20210159169A1

公开(公告)日：2021-05-27

申请号：US16697560

申请日：2019-11-27

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dengtao ZHAO ,  Zhiping ZHANG ,  Peng ZHANG ,  Deepanshu DUTTA

IPC: H01L23/522 ,  H01L23/528 ,  G11C5/06 ,  G11C16/16 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, where the electrically conductive layers comprise word lines located between a source select gate electrode and a drain select gate electrode, a memory opening vertically extending through each layer of the alternating stack to a top surface of the substrate, a memory film and vertical semiconductor channel having a doping of a first conductivity type located in the memory opening, and an active region having a doping of a second conductivity type that is an opposite of the first conductivity type and adjoined to an end portion of the vertical semiconductor channel to provide a p-n junction. The end portion of the vertical semiconductor channel has a first thickness, and a middle portion of the vertical semiconductor channel has a second thickness which is less than the first thickness.

公开(公告)号：US20230099107A1

公开(公告)日：2023-03-30

申请号：US17485949

申请日：2021-09-27

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yanli ZHANG ,  Peng ZHANG

IPC: H01L27/11551 ,  H01L27/11578 ,  H01L27/11529 ,  H01L27/11573

Abstract: A three-dimensional memory device includes a first alternating stack of first insulating layers and first electrically conductive layers located over a semiconductor material layer, an inter-tier dielectric layer, and a second alternating stack of second insulating layers and second electrically conductive layers located over the inter-tier dielectric layer. A memory opening vertically extends through the second alternating stack, the inter-tier dielectric layer, and the first alternating stack. A memory opening fill structure is located in the memory opening, and includes a first vertical semiconductor channel, a second vertical semiconductor channel, and an inter-tier doped region located between the first and the second semiconductor channel, and providing a first p-n junction with the first vertical semiconductor channel and providing a second p-n junction with the second vertical semiconductor channel.

公开(公告)号：US20220367487A1

公开(公告)日：2022-11-17

申请号：US17317479

申请日：2021-05-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Peng ZHANG ,  Yanli ZHANG ,  Xiang YANG ,  Koichi MATSUNO ,  Masaaki HIGASHITANI ,  Johann ALSMEIER

IPC: H01L27/1159 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11597 ,  H01L29/06 ,  H01L21/764

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, an array of memory opening fill structures located within an array of memory openings vertically extending through the alternating stack, and a drain-select-level isolation structure vertically extending through drain-select-level electrically conductive layers between two rows of memory opening fill structures. The drain-select-level isolation structure may comprise a low-k dielectric material or an air gap.

公开(公告)号：US20210183882A1

公开(公告)日：2021-06-17

申请号：US16710481

申请日：2019-12-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yanli ZHANG ,  Dong-il MOON ,  Raghuveer S. MAKALA ,  Peng ZHANG ,  Wei ZHAO ,  Ashish BARASKAR

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L23/532 ,  H01L21/311 ,  H01L27/11526 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11573 ,  H01L21/28 ,  H01L23/528

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a memory film and a vertical semiconductor channel. At least one of the electrically conductive layers contains a first conductive material portion having a respective inner sidewall that contacts a respective one of the memory films at a vertical interface, and a second conductive material portion that has a different composition from the first conductive material portion, and contacting the first electrically conductive material portion. The first conductive material portion has a lower work function than the second conductive material portion.

公开(公告)号：US20210183883A1

公开(公告)日：2021-06-17

申请号：US16710572

申请日：2019-12-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yanli ZHANG ,  Dong-il MOON ,  Raghuveer S. MAKALA ,  Peng ZHANG ,  Wei ZHAO ,  Ashish BARASKAR

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/28 ,  H01L27/11526 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11573

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a memory film and a vertical semiconductor channel. At least one of the electrically conductive layers contains a first conductive material portion having a respective inner sidewall that contacts a respective one of the memory films at a vertical interface, and a second conductive material portion that has a different composition from the first conductive material portion, and contacting the first electrically conductive material portion. The first conductive material portion has a lower work function than the second conductive material portion.