-
1.发明公开公开(公告)号：US20240194475A1
公开(公告)日：2024-06-13
申请号：US18555487
申请日：2022-03-23
IPC分类号： H01L21/02 , H01L21/306 , H01L21/67
CPC分类号： H01L21/02057 , H01L21/30604 , H01L21/67023
摘要： A substrate processing method includes supplying a chemical solution to a surface of a substrate (step S11), supplying a rinse liquid to the surface of the substrate after step S11 (step S12), bringing a heated dry processing liquid to the surface of the substrate after step S12 (step S14), and drying the substrate by removing the dry processing liquid from the surface of the substrate (step S15). The dry processing liquid has a lower surface tension than the rinse liquid. The boiling point of the dry processing liquid is higher than the boiling point of the rinse liquid. The dry processing liquid that comes in contact with the surface of the substrate in step S14 has a temperature that is a predetermined contact temperature higher than or equal to the boiling point of the rinse liquid and lower than the boiling point of the dry processing liquid.
-
公开(公告)号：US20220148896A1
公开(公告)日：2022-05-12
申请号：US17438975
申请日：2020-01-21
发明人： Takashi OTA , Makoto TAKAOKA , Toru EDO , Hiroshi HORIGUCHI
IPC分类号： H01L21/67
摘要： A processing condition selection method includes a step (S21) and a step (S22). In the step (S21), a thickness pattern TM that represents a distribution of thicknesses measured at respective measurement points on a target is compared to pre-stored reference patterns (RP) to specify a reference pattern (RP) having a high correlation with the thickness pattern (TM) from among the reference patterns (RP) based on a prescriptive rule. In the step (S22), a reference processing condition associated with the specified reference pattern (RP) is acquired as a processing condition for the target from among reference processing conditions associated with the respective reference patterns (RP). The reference patterns (RP) each represent a distribution of physical quantities of a corresponding one of reference targets. The reference processing conditions each are a processing condition when processing is previously performed on a corresponding one of the reference targets with a corresponding one of the reference patterns (RP).
-
公开(公告)号：US20200294843A1
公开(公告)日：2020-09-17
申请号：US16889834
申请日：2020-06-02
发明人： Takashi OTA , Manabu OKUTANI , Hiroshi ABE
IPC分类号： H01L21/687 , H01L21/67
摘要： A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.
-
公开(公告)号：US20180033605A1
公开(公告)日：2018-02-01
申请号：US15548183
申请日：2015-12-28
发明人： Takashi OTA , Taiki HINODE
摘要： Method for performing cleaning treatment on a substrate having a fine pattern provided with a film formed on the surface, comprises: a silylating step of supplying a silylating agent to the surface of the substrate and silylating the surface of the substrate; and a liquid-chemical cleaning step of supplying a cleaning liquid chemical to the surface of the substrate and cleaning the surface of the substrate after, or simultaneously with, the silylating step.
-
公开(公告)号：US20170117160A1
公开(公告)日：2017-04-27
申请号：US15401892
申请日：2017-01-09
发明人： Akio HASHIZUME , Takashi OTA
CPC分类号： H01L21/31138 , B05C9/14 , B05C11/08 , B05C11/1015 , B08B3/08 , G03F7/42 , H01L21/31133 , H01L21/67034 , H01L21/67051 , H01L21/67109
摘要： In a substrate processing method, a substrate holding unit holds a substrate in a horizontal position, a processing liquid supplying unit supplies first and second processing liquids to the surface of the substrate held by the substrate holding unit, a substrate rotating unit rotates the substrate held by the substrate holding unit, a heater opposes the substrate held by the substrate holding unit, and a moving unit moves at least one of the substrate holding unit and the heater supporting member such that the heater and the substrate are held in two different relative positions.
-
公开(公告)号：US20160049308A1
公开(公告)日：2016-02-18
申请号：US14824427
申请日：2015-08-12
发明人： Taiki HINODE , Takashi OTA , Kazuhide SAITO
IPC分类号： H01L21/311
CPC分类号： H01L21/31111 , H01L21/67028
摘要： A substrate processing method includes a phosphoric acid processing step of supplying a phosphoric acid aqueous solution, which contains silicon and has a silicon concentration lower than a saturation concentration, to a front surface of a substrate, a liquid volume reducing step of reducing a volume of the phosphoric acid aqueous solution on the substrate, after the phosphoric acid processing step, and a rinse replacing step of supplying a rinse liquid having a temperature lower than that of the phosphoric acid aqueous solution supplied to the front surface of the substrate in the phosphoric acid processing step to the front surface of the substrate covered with the phosphoric acid aqueous solution at least partially, after the liquid volume reducing step.
摘要翻译： 基板处理方法包括磷酸处理工序，将含有硅浓度低于饱和浓度的硅的磷酸水溶液供给到基板的前表面，减小液体体积的液体体积减少步骤 在磷酸处理步骤之后的基板上的磷酸水溶液和在磷酸中供给温度低于供给到基板前表面的磷酸水溶液的温度的冲洗液的漂洗置换步骤 处理步骤至少部分地在所述液体体积减小步骤之后到所述磷酸水溶液覆盖的所述基材的前表面上。
-
公开(公告)号：US20230302501A1
公开(公告)日：2023-09-28
申请号：US18188976
申请日：2023-03-23
摘要： A substrate processing apparatus delivers a gas between a lower surface of a substrate and a base surface of a base part to form an airflow flowing radially outward and to cause a pressure drop in a space between the substrate and the base part by the Bernoulli effect. The base surface includes a second surface sloping upward in a radially outward direction. A third surface slopes downward in a radially outward direction from the outer peripheral edge of the second surface. A fourth surface is an annular surface contiguous to the lower edge of the third surface. The fourth surface expands radially outward outside the outer peripheral edge of the substrate in the radial direction. Accordingly, it is possible to suppress adhesion of a processing liquid to the lower surface of the substrate and to improve the stability of holding the substrate.
-
公开(公告)号：US20230290670A1
公开(公告)日：2023-09-14
申请号：US17948848
申请日：2022-09-20
IPC分类号： H01L21/687 , H01L21/67 , H01L21/683
CPC分类号： H01L21/68785 , H01L21/67017 , H01L21/6875 , H01L21/6838
摘要： In a substrate holder, a gas supply part sends out a gas to the space between the lower surface of a substrate and a base surface of a base part to form a radially outward airflow. A division plate is arranged radially outward of the outer peripheral edge of the substrate on the base surface of the base part to surround the substrate. The inner peripheral edge of the division plate and the outer peripheral edge of the substrate face each other in the radial direction with a space in between. The upper surface of the division plate is located below or at the same position in the up-down direction as the upper surface of the substrate. An annular passage is provided between the lower surface of the division plate and the base surface of the base part.
-
公开(公告)号：US20230053059A1
公开(公告)日：2023-02-16
申请号：US17793573
申请日：2020-11-25
发明人： Dai INAGI , Tatsuya SHIMANO , Takashi OTA
IPC分类号： H01L21/67 , H01L21/306
摘要： A processing condition specifying method that includes Steps S31, S32, and S33. In Step S31, a prediction thickness information piece containing prediction values of thicknesses after processing on the substrate W is calculated for each of a plurality of recipe information pieces based on measurement thickness information containing measurement values of thicknesses of the substrate W. In Step S32, the prediction thickness information pieces each calculated for a corresponding one of the recipe information pieces are evaluated according to a prescribed evaluation method and a prediction thickness information piece is selected from among the prediction thickness information pieces. In Step S33, a recipe information piece corresponding to the selected prediction thickness information piece is specified. The measurement values contained in the measurement thickness information indicate a thickness of the substrate W measured before processing on the substrate W.
-
公开(公告)号：US20210028032A1
公开(公告)日：2021-01-28
申请号：US16979194
申请日：2018-12-28
发明人： Takashi OTA , Masayuki HAYASHI , Jiro OKUDA , Akihiro NAKASHIMA
IPC分类号： H01L21/67 , H01L21/306 , H01L21/66
摘要： A substrate processing apparatus includes a temperature detector and a controller. The temperature detector detects a temperature of processing liquid before the temperature of the processing liquid in pre-dispensing in progress reaches a target temperature. The controller sets discharge stop duration of the processing liquid in the pre-dispensing based on target temperature prediction duration. The target temperature prediction duration is prediction duration until the temperature of the processing liquid reaches the target temperature from a detection temperature. The detection temperature is the temperature of the processing liquid detected by the temperature detector before the temperature of the processing liquid reaches the target temperature. The target temperature prediction duration is determined based on a temperature profile. The temperature profile indicates a record of the temperature of the processing liquid changing over time when the pre-dispensing processing was performed in the past according to the pre-dispensing condition.
-
-
-
-
-
-
-
-
-
搜索结果
31 条记录 (耗时 0.023 秒)
