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    MAGNETORESISTIVE SENSOR
    1.
    发明申请
    MAGNETORESISTIVE SENSOR 审中-公开
    磁传感器

    公开(公告)号：US20150311430A1

    公开(公告)日：2015-10-29

    申请号：US14263146

    申请日：2014-04-28

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi ,  Konstantin Nikolaev

    IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01L43/10

    Abstract: Implementations disclosed herein provide a magnetoresistive (MR) sensor including a free layer comprising a first layer of CoFeB or CoFe/CoFeB and a second layer made of an alloyed layer including a ferromagnetic material and a refractory material. An implementation of the MR sensor further includes a cap layer adjacent to the second layer wherein the cap layer does not include any tantalum.

    Abstract translation: 本文公开的实施方案提供了一种磁阻（MR）传感器，其包括包含第一层CoFeB或CoFe / CoFeB的自由层和由包含铁磁材料和耐火材料的合金层制成的第二层。 MR传感器的实现还包括与第二层相邻的盖层，其中盖层不包括任何钽。

    Magnetoresistive sensor with AFM-stabilized bottom shield
    3.
    发明授权
    Magnetoresistive sensor with AFM-stabilized bottom shield 有权
    具有AFM稳定底板的磁阻传感器

    公开(公告)号：US09251815B2

    公开(公告)日：2016-02-02

    申请号：US13930150

    申请日：2013-06-28

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Konstantin Nikolaev ,  Liwen Tan ,  Jae-Young Yi ,  Victor Boris Sapozhnikov ,  Mohammed Sharia Ullah Patwari

    IPC: G11B5/39

    CPC classification number: G11B5/3912 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

    Abstract: An apparatus disclosed herein includes a sensor stack including a first layer and an AFM stabilized bottom shield in proximity to the first layer, wherein the AFM stabilized bottom shield is magnetically coupled to the first layer. The apparatus reduces shield-to-shield spacing. The pinned layer of the bottom shield and a pinned layer of the sensor stack are stabilized using the AFM layer in the bottom shield. In one implementation, the bottom shield is made of the SAF structure, with the top layer of the structure adjacent to a pinned layer in the sensor stack.

    Abstract translation: 本文公开的装置包括传感器堆叠，其包括靠近第一层的第一层和AFM稳定的底部屏蔽，其中AFM稳定的底部屏蔽物磁耦合到第一层。 该设备减少屏蔽间隔。 使用底部屏蔽中的AFM层来稳定底部屏蔽的固定层和传感器堆叠的固定层。 在一个实施方案中，底部屏蔽由SAF结构制成，结构的顶层与传感器堆叠中的固定层相邻。

    SENSOR STACK STRUCTURE
    4.
    发明申请
    SENSOR STACK STRUCTURE 有权
    传感器堆叠结构

    公开(公告)号：US20150325260A1

    公开(公告)日：2015-11-12

    申请号：US14270593

    申请日：2014-05-06

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi ,  Konstantin Nikolaev ,  Zhiguo Ge

    IPC: G11B5/39 ,  G11B5/31

    CPC classification number: G11B5/3912 ,  G11B5/3153 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3958 ,  G11B2005/3996

    Abstract: A reader stack, such as for a magnetic storage device, the stack having a top synthetic antiferromagnetic (SAF) layer, a magnetic capping layer adjacent to the top SAF layer, an RKKY coupling layer adjacent to the magnetic capping layer opposite the top SAF layer, and a free layer adjacent to the RKKY coupling layer opposite the magnetic capping layer. Also included is a method for biasing a free layer in a reader stack by providing an exchange coupling between the free layer and a top synthetic antiferromagnetic (SAF) layer using a layer having RKKY coupling property positioned between the free layer and the top SAF layer and a magnetic capping layer between the SAF layer and the layer having RKKY coupling property.

    Abstract translation: 诸如用于磁存储装置的读取器堆叠，堆叠具有顶部合成反铁磁（SAF）层，与顶部SAF层相邻的磁性覆盖层，与顶部SAF层相对的磁性覆盖层相邻的RKKY耦合层 以及与RKKY耦合层相邻的与磁性覆盖层相对的自由层。 还包括一种通过使用具有位于自由层和顶部SAF层之间的具有RKKY耦合性质的层的自由层和顶层合成反铁磁性（SAF）层之间的交换耦合来偏置读取器堆叠中的自由层的方法，以及 SAF层和具有RKKY耦合性质的层之间的磁性覆盖层。

    MAGNETORESISTIVE SENSOR
    7.
    发明申请
    MAGNETORESISTIVE SENSOR 有权
    磁传感器

    公开(公告)号：US20150332714A1

    公开(公告)日：2015-11-19

    申请号：US14808430

    申请日：2015-07-24

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi ,  Konstantin Nikolaev

    IPC: G11B5/39

    CPC classification number: G11B5/3912 ,  G01R33/0017 ,  G01R33/09 ,  G01R33/098

    Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each includes a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.

    Abstract translation: 通过提供一个或多个合金层，每个包含铁磁材料和耐火材料，本文公开的实施方式允许通过磁阻（MR）传感器检测到的信号得到改进。 合金层邻近屏蔽元件或传感器堆叠的软磁层之间设置。

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