公开(公告)号：US11699605B2

公开(公告)日：2023-07-11

申请号：US16871118

申请日：2020-05-11

Applicant: SEMES CO., LTD.

Inventor： Kyungsik Shin ,  Jung-Hyun Lee ,  Jinki Shin ,  Seo Jung Park

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6715 ,  H01L21/67109 ,  H01L21/68707 ,  H01L21/68742

Abstract: An apparatus for treating a substrate includes a chamber having a treating space formed therein, a substrate support unit that supports the substrate in the treating space, a plate that is located to face the substrate support unit in the treating space and that has a plurality of holes formed therein, a gas supply unit that supplies gas into the treating space through the holes, and a gas exhaust unit that exhausts the gas in the treating space through the holes.

公开(公告)号：US11923212B2

公开(公告)日：2024-03-05

申请号：US17072501

申请日：2020-10-16

Applicant: SEMES CO., LTD.

Inventor： Kyungsik Shin ,  Junho Kim ,  Jinki Shin

IPC: H01L21/67 ,  F27B17/00 ,  F27D5/00 ,  G03F7/16 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/66 ,  H05B3/22

CPC classification number: H01L21/67109 ,  F27B17/0025 ,  F27B17/0083 ,  F27D5/0037 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/67253 ,  H01L22/26 ,  H05B3/22

Abstract: An apparatus for treating a substrate includes a process chamber having a process space inside, a support unit that supports the substrate in the process space, a heating unit that is provided inside the support unit and that heats the substrate, an exhaust unit that evacuates the process space, and a gas supply unit that supplies a gas into the process space, and the gas supply unit supplies the gas at a temperature selected from a first temperature and a second temperature.

公开(公告)号：US11776826B2

公开(公告)日：2023-10-03

申请号：US16999836

申请日：2020-08-21

Applicant: SEMES CO., LTD.

Inventor： Junho Kim ,  Kyungsik Shin ,  Youngseo An ,  Jinki Shin ,  Man Kyu Kang ,  Yoonki Sa

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67109 ,  H01L21/67017 ,  H01L21/67161 ,  H01L21/683

Abstract: An apparatus for treating a substrate includes a process chamber having a process space therein, a support unit that supports the substrate in the process space, a heating member that heats the substrate supported on the support unit, and an exhaust unit that evacuates the process space. The exhaust unit includes an exhaust duct and a heat retention unit having a retention space that retains heat released from the process space. The retention space surrounds an adjacent area located adjacent to the process chamber in the exhaust duct.