公开(公告)号：US20210202296A1

公开(公告)日：2021-07-01

申请号：US17138427

申请日：2020-12-30

Applicant: SEMES CO., LTD.

Inventor： Sukhwan CHI ,  Kyo Sang YOON ,  Bo Hee LEE ,  Byoungdoo CHOI

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/677

Abstract: A method for lifting a substrate includes raising the substrate off a support plate having the substrate placed thereon, by using a lift pin, in which the lift pin raises the substrate off the support plate while vertically moving between a lowered position spaced apart downward from the support plate by a first distance and a raised position spaced apart upward from the support plate by a second distance, and the lift pin is brought into contact with the substrate in an interval in which the lift pin is decelerated or moved at a constant velocity.

公开(公告)号：US20210134620A1

公开(公告)日：2021-05-06

申请号：US17088143

申请日：2020-11-03

Applicant: SEMES CO., LTD.

Inventor： Seunghan LEE ,  Jong Seok SEO ,  Euntark LEE ,  Jaeoh BANG ,  Sukhwan CHI

IPC: H01L21/67 ,  H05B1/02 ,  F27B17/00 ,  F27D5/00 ,  H05B3/22 ,  G03F7/16

Abstract: Embodiments of the inventive concept provides an apparatus for treating a substrate. An embodiment of the inventive concept comprises a housing having a process space therein; and a supporting unit supporting a substrate in the process space, and the supporting unit comprises a supporting plate supporting the substrate; a heater member provide in the supporting plate and heating the substrate; and a cooling unit provided below the heater member and cooling the supporting plate, the cooling unit comprises a cooling plate spaced apart from the heater member; and a nozzle provided in the cooling plate, and supplying a cooling gas to a bottom surface of the heater member; and a driver moving the cooling plate between a standby position spaced a first distance apart from the heater member and a cooling position spaced a second distance apart from the heater member, the second distance is shorter than the first distance.

公开(公告)号：US20210028028A1

公开(公告)日：2021-01-28

申请号：US16936041

申请日：2020-07-22

Applicant: SEMES CO., LTD.

Inventor： Sukhwan CHI

IPC: H01L21/67 ,  G03F7/38

Abstract: An apparatus for treating a substrate using a process gas includes a chamber having a treatment space defined therein, a substrate support unit for supporting the substrate in the treatment space, a gas supply pipe disposed in a ceiling surface of the chamber for supplying the process gas to the treatment space, and an exhaust unit for exhausting the process gas in the treatment space, wherein the exhaust unit includes an exhaust plate having an exhaust hole defined therein through which the process gas is exhausted, and an adjustment plate overlapping the exhaust plate, wherein the adjustment plate is constructed to control an opened amount of the exhaust hole when viewed from above.