APPARATUS AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20210020412A1

    公开(公告)日:2021-01-21

    申请号:US16929231

    申请日:2020-07-15

    Applicant: Semes Co., Ltd

    Abstract: An apparatus for treating a substrate includes a process chamber having a treatment space therein, a support unit that supports the substrate in the treatment space, a gas supply unit that supplies a process gas into the treatment space, an RF power supply that supplies an RF signal to excite the process gas into plasma, and a matching circuit connected between the RF power supply and the process chamber. The matching circuit includes an impedance matching device that performs impedance matching and a harmonic removal device that removes harmonics caused by the RF power supply. The matching circuit operates in a first mode when the harmonics caused by the RF power supply are sensed and in a second mode when the harmonics caused by the RF power supply are not sensed.

    SUBSTRATE TREATING APPARATUS
    2.
    发明公开

    公开(公告)号:US20230207280A1

    公开(公告)日:2023-06-29

    申请号:US18147381

    申请日:2022-12-28

    CPC classification number: H01J37/32568 H01J2237/0262 H01J2237/334

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a treatment space, in which a substrate is treated, a support unit that supports the substrate in the treatment space, a shower plate having a through-hole, through which a process gas flows to the treatment space, a plasma source that excites plasma by exciting the process gas supplied to the treatment space, and a density adjusting member that adjusts a density of the plasma generated in the treatment space by changing a dielectric permittivity, and the density adjusting member is located on the shower plate.

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