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公开(公告)号:US20230207271A1
公开(公告)日:2023-06-29
申请号:US18055917
申请日:2022-11-16
Inventor: Yoon Seok CHOI , Sun Wook JUNG , Jong Won PARK , Ho-Jun LEE , Min Sang PARK
IPC: H01J37/32
CPC classification number: H01J37/32201 , H01J37/3244 , H01J37/32229 , H01J2237/327
Abstract: The apparatus includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, a gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma. The microwave application unit may include first power supply for applying a first microwave, a support plate having a groove formed on an upper surface thereof and combined with the process chamber above the support unit to define the treating space, a first transmission plate inserted into the groove to radiate the first microwave to the treating space, and a first waveguide disposed to overlap with an upper portion of the first transmission plate and coupled to the first power supply, wherein a plurality of grooves may be formed along a circumferential direction in an edge region of the support plate.
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公开(公告)号:US20220163891A1
公开(公告)日:2022-05-26
申请号:US17522007
申请日:2021-11-09
Applicant: SEMES CO., LTD.
Inventor: Ki Sang EUM , Jin Ho CHOI , Sun Wook JUNG , Byoung Doo CHOI , Hee Man AHN , Si Eun KIM
IPC: G03F7/16
Abstract: An apparatus for treating a substrate includes a treating vessel having an inner space, a support unit that supports and rotates the substrate in the inner space, and an exhaust unit that releases an air flow in the inner space. The exhaust unit includes an air-flow guide duct into which the air flow is introduced in a tangential direction with respect to a rotating direction of the substrate supported on the support unit.
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公开(公告)号:US20230124184A1
公开(公告)日:2023-04-20
申请号:US17968179
申请日:2022-10-18
Applicant: SEMES CO., LTD.
Inventor: Yoon Seok CHOI , Yun Sang KIM , Sun Wook JUNG
IPC: H01J37/32 , H01Q7/00 , H01L21/683
Abstract: The inventive concept provides an antenna member. In an embodiment, the antenna member includes a first coil and a second coil which have a rotational symmetry to each other, and wherein the first coil includes a first supply terminal applied with a current and a first ground terminal connected to the ground, the second coil includes a second supply terminal applied with the current and a second ground terminal connected to the ground, and wherein the first coil and the second coil each include a first portion having an arc-shape and a second portion having an arc-shape which as a whole form one winding, and when seen from a side, the second portion has a relatively lower height than the first portion, and the second portion of the second coil is positioned below the first portion of the first coil, and the second portion of the first coil is positioned below the first portion of the second coil.
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公开(公告)号:US20230081182A1
公开(公告)日:2023-03-16
申请号:US17939174
申请日:2022-09-07
Applicant: SEMES CO., LTD.
Inventor: Yoon Seok CHOI , Yun Sang KIM , Sun Wook JUNG
IPC: H01J37/32 , H01L21/306
Abstract: The inventive concept provides a substrate treating apparatus. In an embodiment the substrate treating apparatus includes a process chamber having a treating space therein for treating a substrate; a substrate support unit configured to support the substrate in the treating space; and a microwave application unit configured to apply a microwave to the treating space, and wherein the microwave application unit comprises a microwave power generator based on a solid state device.
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公开(公告)号:US20240162056A1
公开(公告)日:2024-05-16
申请号:US18367564
申请日:2023-09-13
Applicant: SEMES CO., LTD.
Inventor: Sun Wook JUNG , Ha Neul YOO , Woo Ram LEE , Young Jun SON
CPC classification number: H01L21/67051 , B08B3/022
Abstract: An apparatus for processing a substrate includes a first bowl and a processing space therein; a first support portion disposed in the processing space and configured to support the substrate in a first support position; a second bowl disposed to move in a first direction in the processing space; a second support portion configured to move upwardly and downwardly with respect to the first support portion to support the substrate between the second support position disposed above the first support position and the third support position, and to move in the first direction; and a cleaning unit including a first cleaning portion disposed below the substrate toward a rear surface of the substrate in the first support position and a second cleaning portion disposed below the substrate and opposing a rear surface of the substrate between the second support position and the third support position.
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公开(公告)号:US20220165589A1
公开(公告)日:2022-05-26
申请号:US17533348
申请日:2021-11-23
Applicant: SEMES CO., LTD.
Inventor: Ki Sang EUM , Jin Ho CHOI , Byoung Doo CHOI , Seung Han LEE , Sun Wook JUNG , Si Eun KIM
IPC: H01L21/67 , C23C16/455 , C23C16/44 , H01L21/687 , H01L21/02
Abstract: An apparatus for treating a substrate, the apparatus comprising: a processing container having an inner space; a support unit having a support plate configured to support and rotate the substrate in the inner space; a liquid supply unit supplying treating liquid to the substrate supported by the support unit; and an exhaust unit exhausting an air flow in the inner space, wherein the processing container includes a bottom wall and a side wall extending from the outside end of the bottom wall, the processing container including a first gas-liquid separator provided at the side wall.
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公开(公告)号:US20240339299A1
公开(公告)日:2024-10-10
申请号:US18607486
申请日:2024-03-17
Applicant: SEMES CO., LTD.
Inventor: Yoon Seok CHOI , Sun Wook JUNG , Youn Gun BONG
IPC: H01J37/32
CPC classification number: H01J37/3222 , H01J37/32229 , H01J37/32238 , H01J37/3244 , H01J37/32541 , H01J37/3255
Abstract: Proposed are a microwave antenna, and a power supplying device and a substrate processing apparatus including the same, which ensure efficient placement of components while effectively applying power to a plasma chamber. The microwave antenna includes a ring frame, and a plurality of slots provided on an inner wall of the ring frame.
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公开(公告)号:US20240216957A1
公开(公告)日:2024-07-04
申请号:US18386914
申请日:2023-11-03
Applicant: SEMES CO., LTD.
Inventor: Sun Wook JUNG , Hyun YOON , Ha Neul YOO , Ho Jong HWANG
CPC classification number: B08B3/022 , B08B13/00 , H01L21/67051
Abstract: According to the present disclosure, provided is a bowl receiving incident droplets and preventing the same from scattering, or causing the same to scatter downwardly, the bowl including: a main body surrounding a substrate support unit; a groove formed in a spiral shape in at least a portion of an inner surface of the main body; and a separation wall disposed between adjacent grooves in a vertical direction on the inner surface of the main body, wherein a thickness at a first position in the main body in which the groove is formed is greater than a thickness at a second position, lower than the first position.
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公开(公告)号:US20230207280A1
公开(公告)日:2023-06-29
申请号:US18147381
申请日:2022-12-28
Applicant: SEMES CO., LTD.
Inventor: Sun Joo PARK , Kyung Seok MIN , Hyun Jong SHIM , Sun Wook JUNG , Sang Min MUN , Ho Joong SUN
IPC: H01J37/32
CPC classification number: H01J37/32568 , H01J2237/0262 , H01J2237/334
Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a treatment space, in which a substrate is treated, a support unit that supports the substrate in the treatment space, a shower plate having a through-hole, through which a process gas flows to the treatment space, a plasma source that excites plasma by exciting the process gas supplied to the treatment space, and a density adjusting member that adjusts a density of the plasma generated in the treatment space by changing a dielectric permittivity, and the density adjusting member is located on the shower plate.
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公开(公告)号:US20230207272A1
公开(公告)日:2023-06-29
申请号:US18056046
申请日:2022-11-16
Inventor: Sang Jeong LEE , Yoon Seok CHOI , Sun Wook JUNG , Ho-Jun LEE , Sang Woo KIM
IPC: H01J37/32
CPC classification number: H01J37/32201 , H01J37/3244 , H01J37/32229
Abstract: An exemplary embodiment of the present invention provided an apparatus for treating a substrate. The apparatus for treating the substrate includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate the microwaves to the treating space, a first waveguide disposed above the transmission plate, and a first power supply for applying the microwaves to the first waveguide, wherein the first waveguide is provided in a ring shape.
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