APPARATUS FOR TREATING SUBSTRATE
    1.
    发明公开

    公开(公告)号:US20230207271A1

    公开(公告)日:2023-06-29

    申请号:US18055917

    申请日:2022-11-16

    Abstract: The apparatus includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, a gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma. The microwave application unit may include first power supply for applying a first microwave, a support plate having a groove formed on an upper surface thereof and combined with the process chamber above the support unit to define the treating space, a first transmission plate inserted into the groove to radiate the first microwave to the treating space, and a first waveguide disposed to overlap with an upper portion of the first transmission plate and coupled to the first power supply, wherein a plurality of grooves may be formed along a circumferential direction in an edge region of the support plate.

    APPARATUS FOR TREATING SUBSTRATE
    2.
    发明申请

    公开(公告)号:US20220163891A1

    公开(公告)日:2022-05-26

    申请号:US17522007

    申请日:2021-11-09

    Abstract: An apparatus for treating a substrate includes a treating vessel having an inner space, a support unit that supports and rotates the substrate in the inner space, and an exhaust unit that releases an air flow in the inner space. The exhaust unit includes an air-flow guide duct into which the air flow is introduced in a tangential direction with respect to a rotating direction of the substrate supported on the support unit.

    ANTENNA MEMBER AND APPARATUS FOR TREATING SUBSTRATE

    公开(公告)号:US20230124184A1

    公开(公告)日:2023-04-20

    申请号:US17968179

    申请日:2022-10-18

    Abstract: The inventive concept provides an antenna member. In an embodiment, the antenna member includes a first coil and a second coil which have a rotational symmetry to each other, and wherein the first coil includes a first supply terminal applied with a current and a first ground terminal connected to the ground, the second coil includes a second supply terminal applied with the current and a second ground terminal connected to the ground, and wherein the first coil and the second coil each include a first portion having an arc-shape and a second portion having an arc-shape which as a whole form one winding, and when seen from a side, the second portion has a relatively lower height than the first portion, and the second portion of the second coil is positioned below the first portion of the first coil, and the second portion of the first coil is positioned below the first portion of the second coil.

    APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20230081182A1

    公开(公告)日:2023-03-16

    申请号:US17939174

    申请日:2022-09-07

    Abstract: The inventive concept provides a substrate treating apparatus. In an embodiment the substrate treating apparatus includes a process chamber having a treating space therein for treating a substrate; a substrate support unit configured to support the substrate in the treating space; and a microwave application unit configured to apply a microwave to the treating space, and wherein the microwave application unit comprises a microwave power generator based on a solid state device.

    APPARATUS FOR PROCESSING SUBSTRATE
    5.
    发明公开

    公开(公告)号:US20240162056A1

    公开(公告)日:2024-05-16

    申请号:US18367564

    申请日:2023-09-13

    CPC classification number: H01L21/67051 B08B3/022

    Abstract: An apparatus for processing a substrate includes a first bowl and a processing space therein; a first support portion disposed in the processing space and configured to support the substrate in a first support position; a second bowl disposed to move in a first direction in the processing space; a second support portion configured to move upwardly and downwardly with respect to the first support portion to support the substrate between the second support position disposed above the first support position and the third support position, and to move in the first direction; and a cleaning unit including a first cleaning portion disposed below the substrate toward a rear surface of the substrate in the first support position and a second cleaning portion disposed below the substrate and opposing a rear surface of the substrate between the second support position and the third support position.

    APPARATUS FOR TREATING SUBSTRATE
    6.
    发明申请

    公开(公告)号:US20220165589A1

    公开(公告)日:2022-05-26

    申请号:US17533348

    申请日:2021-11-23

    Abstract: An apparatus for treating a substrate, the apparatus comprising: a processing container having an inner space; a support unit having a support plate configured to support and rotate the substrate in the inner space; a liquid supply unit supplying treating liquid to the substrate supported by the support unit; and an exhaust unit exhausting an air flow in the inner space, wherein the processing container includes a bottom wall and a side wall extending from the outside end of the bottom wall, the processing container including a first gas-liquid separator provided at the side wall.

    SUBSTRATE TREATING APPARATUS
    9.
    发明公开

    公开(公告)号:US20230207280A1

    公开(公告)日:2023-06-29

    申请号:US18147381

    申请日:2022-12-28

    CPC classification number: H01J37/32568 H01J2237/0262 H01J2237/334

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a treatment space, in which a substrate is treated, a support unit that supports the substrate in the treatment space, a shower plate having a through-hole, through which a process gas flows to the treatment space, a plasma source that excites plasma by exciting the process gas supplied to the treatment space, and a density adjusting member that adjusts a density of the plasma generated in the treatment space by changing a dielectric permittivity, and the density adjusting member is located on the shower plate.

    APPARATUS FOR TREATING SUBSTRATE
    10.
    发明公开

    公开(公告)号:US20230207272A1

    公开(公告)日:2023-06-29

    申请号:US18056046

    申请日:2022-11-16

    CPC classification number: H01J37/32201 H01J37/3244 H01J37/32229

    Abstract: An exemplary embodiment of the present invention provided an apparatus for treating a substrate. The apparatus for treating the substrate includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate the microwaves to the treating space, a first waveguide disposed above the transmission plate, and a first power supply for applying the microwaves to the first waveguide, wherein the first waveguide is provided in a ring shape.

Patent Agency Ranking