Abstract:
Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a treatment space, in which a substrate is treated, a support unit that supports the substrate in the treatment space, a shower plate having a through-hole, through which a process gas flows to the treatment space, a plasma source that excites plasma by exciting the process gas supplied to the treatment space, and a density adjusting member that adjusts a density of the plasma generated in the treatment space by changing a dielectric permittivity, and the density adjusting member is located on the shower plate.
Abstract:
Provided is an apparatus for treating a substrate. The apparatus comprises a plasma boundary limiter unit disposed within a process chamber to surround a discharge space defined above a support unit. The plasma boundary limiter unit comprises a plurality of plates disposed along a circumference of the discharge space, and the plurality of plates are spaced apart from each other along the circumference of the discharge space so that a gas within the discharge space flows to the outside of the discharge space through passages provided between the adjacent plates.