METHOD AND APPARATUS FOR TREATING SUBSTRATE, AND TEMPERATURE CONTROL METHOD

    公开(公告)号:US20220390849A1

    公开(公告)日:2022-12-08

    申请号:US17831479

    申请日:2022-06-03

    Abstract: The present invention provides a method of treating a substrate, the method including: performing a first heating process of heat-treating the substrate formed with a film, and a second heating process of heat-treating the substrate after the first heating process is performed; a collection operation of collecting temperature data of a first heating plate which heats the substrate in the first heating process; and a first control operation of adjusting a temperature of a second heating plate which heats the substrate in the second heating process based on the temperature data.

    APPARATUS AND METHOD FOR TREATING SUBSTRATE
    2.
    发明申请

    公开(公告)号:US20200211874A1

    公开(公告)日:2020-07-02

    申请号:US16726293

    申请日:2019-12-24

    Abstract: Disclosed is a substrate treating apparatus that includes a housing having a process space therein, a plate that supports a substrate in the housing, a heating member that is provided in the plate and that heats the substrate, a plurality of controllers that control the heating member and that have different gains, a temperature measurement member that measures temperature in the housing, and a control member that switches the plurality of controllers to cause one of the plurality of controllers to control the heating member depending on a temperature drop section, a temperature rise section, and an anneal section in the housing.

    HEATING MEMBER AND SUBSTRATE TREATING APPARATUS

    公开(公告)号:US20230062770A1

    公开(公告)日:2023-03-02

    申请号:US17896614

    申请日:2022-08-26

    Abstract: The inventive concept relates to a heating member for heating a substrate. In an embodiment, the heating member includes a heater plate having at least one heating element bonded thereto, a connecting plate having a first space formed therein in which the heating element is accommodated, and a control plate having a control element bonded thereto, the control element being electrically connected with the heating element to control the heating element.

    APPARATUS AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20210020478A1

    公开(公告)日:2021-01-21

    申请号:US16931733

    申请日:2020-07-17

    Abstract: An apparatus for treating a substrate includes a housing having a treatment space therein, a heating plate that supports the substrate in the treatment space and that has a plurality of heating members inside, and a temperature control unit that controls the plurality of heating members to heat the substrate supported on the heating plate, in which the temperature control unit controls the plurality of heating members using a plurality of control signals with different control periods.

    HEATING UNIT, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, METHOD OF CONTROLLING HEATING UNIT

    公开(公告)号:US20230072272A1

    公开(公告)日:2023-03-09

    申请号:US17902056

    申请日:2022-09-02

    Abstract: Provided is a heating unit including: a heating plate for heating a substrate; a heater installed in the heating plate; and a control unit for controlling the heater, in which wherein the heater includes: a first heater; and a second heater installed at a position different from a position of the first heater, and the control unit includes: a power source for transferring power to at least one of the first heater and the second heater; and a switching module for connecting the first heater and the second heater in series or connecting the first heater and the second heater in parallel.

    APPARATUS AND METHOD FOR TREATING SUBSTRATE
    7.
    发明申请

    公开(公告)号:US20200381279A1

    公开(公告)日:2020-12-03

    申请号:US16886321

    申请日:2020-05-28

    Abstract: An apparatus for treating a substrate includes a housing having a treatment space therein, a plate that supports the substrate in the housing, a heating unit having a heating wire that is provided inside the plate and that heats the substrate, a main temperature sensor that directly measures temperatures of the plate, and an auxiliary temperature sensor that measures temperatures of the heating wire.

    SUBSTRATE PROCESSING METHOD, THERMAL PROCESSING APPARATUS, AND SEMICONDUCTOR MANUFACTURING EQUIPMENT

    公开(公告)号:US20240186161A1

    公开(公告)日:2024-06-06

    申请号:US18524241

    申请日:2023-11-30

    CPC classification number: H01L21/67248 H01L21/324 H01L21/67109 H01L22/26

    Abstract: Disclosure provides a substrate processing method, a thermal processing apparatus, and semiconductor manufacturing equipment that allow wafer thermal processing to be uniformly performed at a preset temperature. The substrate processing method includes determining an output of a heater provided in a heating plate by using a sensor substrate including a plurality of substrate temperature sensors, and performing thermal processing with respect to a substrate in response to the output of the heater. The determining of the output of the heater includes heating the sensor substrate through an initial output of the heater, measuring temperature distribution of the sensor substrate, determining the amount of change of target temperature distribution of the heating plate, and adjusting the output of the heater in response to the amount of change of the target distribution of the temperature heating plate.

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