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公开(公告)号:US20200051784A1
公开(公告)日:2020-02-13
申请号:US16530468
申请日:2019-08-02
Applicant: SEMES CO., LTD.
Inventor: Ogsen GALSTYAN , Young-Bin Kim , Jamyung GU , Jong-Hwan An
Abstract: A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.
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2.
公开(公告)号:US20180102238A1
公开(公告)日:2018-04-12
申请号:US15702119
申请日:2017-09-12
Applicant: SEMES CO., LTD.
Inventor: Jamyung GU , Jong Hwan AN , Shin-Woo NAM , Sooryun RO
IPC: H01J37/32 , H02N13/00 , H03H7/38 , H01L21/67 , H01L21/683
CPC classification number: H01J37/32642 , H01J37/32174 , H01J37/32183 , H01J37/32449 , H01J37/32477 , H01J37/32522 , H01J37/32715 , H01J2237/0203 , H01J2237/334 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H02N13/00 , H03H7/38
Abstract: A substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit that supports a substrate in the treatment space, a gas supply unit configured to supply a treatment gas into the treatment space, and a plasma source configured to generate plasma from the treatment gas. The support unit includes an electrostatic chuck, on which the substrate is positioned, a first ring surrounding a circumference of the substrate positioned on the electrostatic chuck, a second ring surrounding a circumference of the electrostatic chuck and formed of an insulation material, an insertion body disposed in the second ring and formed of a conductive material, and an impedance control unit configured to adjust an impedance of the insertion body.
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