PLASMA GENERATION APPARATUS, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, AND CONTROL METHOD FOR THE PLASMA GENERATION APPARATUS

    公开(公告)号:US20200051784A1

    公开(公告)日:2020-02-13

    申请号:US16530468

    申请日:2019-08-02

    Abstract: A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.

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