公开(公告)号：US20240055537A1

公开(公告)日：2024-02-15

申请号：US18493996

申请日：2023-10-25

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Anne DEIGNAN ,  Nader JEDIDI ,  Michael Gerard KEYES

IPC: H01L31/02 ,  H01L27/146 ,  H01L31/055 ,  H01L31/107 ,  H01L31/0232 ,  G02B3/06

CPC classification number: H01L31/02027 ,  H01L27/14605 ,  H01L31/055 ,  H01L31/107 ,  H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14649 ,  H01L31/02327 ,  G02B3/06 ,  H01L27/1463 ,  H01L27/1464 ,  H04N25/63

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

公开(公告)号：US20210175265A1

公开(公告)日：2021-06-10

申请号：US16949228

申请日：2020-10-21

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Anne DEIGNAN ,  Nader JEDIDI ,  Michael Gerard KEYES

IPC: H01L27/146 ,  H01L31/107

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

公开(公告)号：US20240145504A1

公开(公告)日：2024-05-02

申请号：US18051600

申请日：2022-11-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  Rick Carlton JEROME ,  David T. PRICE ,  Michael Gerard KEYES ,  Anne DEIGNAN

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

Abstract: A semiconductor device may include a plurality of single-photon avalanche diode (SPAD) pixels. The semiconductor device may be a backside device having a substrate at the backside, dielectric layers on the substrate, metal layers interleaved with the dielectric layers, and a through silicon via (TSV) formed in the backside through the substrate and the dielectric layers. TSV seal rings may be formed around the TSV to protect the semiconductor device from moisture and/or water ingress. The TSV seal rings may be coupled to a high-voltage cathode bond pad and be coupled to offset portions of one of the metal layers to reduce leakage and/or parasitic effects due to the voltage difference between the cathode and the substrate. The TSV seal rings may also be merged with die seal rings at the edge of the substrate.