Patent search ap:("SEMICONDUCTOR COMPONENTS INDUSTRIES Page LLC") AND inv:"John Michael Parsey

1.

发明申请
METHOD OF FORMING HEMT SEMICONDUCTOR DEVICES AND STRUCTURE THEREFOR 审中-公开
Title translation: 形成半导体器件及其结构的方法

公开(公告)号：US20140264449A1

公开(公告)日：2014-09-18

申请号：US14162082

申请日：2014-01-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： John Michael Parsey, JR. , Chun-Li Liu , Balaji Padmanabhan , Ali Salih

IPC: H01L29/06 , H01L29/66 , H01L29/778

CPC classification number: H01L29/0653 , H01L21/7624 , H01L29/0649 , H01L29/2003 , H01L29/404 , H01L29/66462 , H01L29/7786 , H01L29/7787

Abstract: In one embodiment, a HEMT semiconductor device includes an isolation region that may include oxygen wherein the isolation region may extend thorough an ALGaN and GaN layer into an underlying layer.

Abstract translation: 在一个实施例中，HEMT半导体器件包括可以包括氧的隔离区，其中隔离区域可以将ALGaN和GaN层延伸到下面的层中。

2.

发明申请
METHOD OF FORMING A HIGH ELECTRON MOBILITY SEMICONDUCTOR DEVICE 审中-公开
Title translation: 形成高电子移动半导体器件的方法

公开(公告)号：US20140264456A1

公开(公告)日：2014-09-18

申请号：US14208803

申请日：2014-03-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Ali Salih , John Michael Parsey, JR.

IPC: H01L29/778 , H01L21/02

CPC classification number: H01L29/778 , H01L21/02365 , H01L21/187 , H01L21/6835 , H01L29/045 , H01L29/0657 , H01L29/66462 , H01L29/7786 , H01L29/7789 , H01L2221/68368

Abstract: In an embodiment, a semiconductor device is formed by a method that includes, providing a base substrate of a first semiconductor material, and forming a layer that is one of SiC or a III-V series material on the base substrate. In a different embodiment, the base substrate may be one of silicon, porous silicon, or porous silicon with nucleation sites formed thereon, or silicon in a (111) plane.

Abstract translation: 在一个实施例中，通过一种方法形成半导体器件，该方法包括提供第一半导体材料的基底衬底，并在基底衬底上形成作为SiC或III-V系列材料之一的层。在不同的实施例中，基底可以是其中形成有成核位点的硅，多孔硅或多孔硅中的一种，或（111）面内的硅。

3.

发明申请
Electronic Devices Including A III-V Transistor Having A Homostructure And A Process Of Forming The Same 有权
Title translation: 包括具有同构结构的III-V晶体管的电子器件及其形成过程

公开(公告)号：US20160308045A1

公开(公告)日：2016-10-20

申请号：US14690703

申请日：2015-04-20

Applicant: Semiconductor Components Industries, LLC

Inventor： Peter Moens , Piet Vanmeerbeek , John Michael Parsey, JR.

IPC: H01L29/78 , H01L29/08 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/20

CPC classification number: H01L29/7827 , H01L21/28264 , H01L29/0603 , H01L29/2003 , H01L29/4236 , H01L29/66522 , H01L29/66666

Abstract: An electronic device can include a vertical III-V transistor having a gate electrode and a channel region within a homostructure. The channel region can be disposed between a first portion and a second portion of the gate electrode. In an embodiment, the III-V transistor can be an enhancement-mode GaN transistor, and in a particular embodiment, the drain, source, and channel regions can include the same conductivity type.

Abstract translation: 电子器件可以包括具有栅电极和同构结构内的沟道区的垂直III-V晶体管。沟道区可以设置在栅电极的第一部分和第二部分之间。在一个实施例中，III-V晶体管可以是增强型GaN晶体管，并且在特定实施例中，漏极，源极和沟道区域可以包括相同的导电类型。