公开(公告)号：US20180138319A1

公开(公告)日：2018-05-17

申请号：US15349162

申请日：2016-11-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ali SALIH ,  Gordon M. GRIVNA ,  Daniel R. HEUTTL ,  Osamu ISHIMARU ,  Thomas KEENA ,  Masafumi UEHARA

IPC: H01L29/861 ,  H01L29/06 ,  H01L29/41 ,  H01L29/45 ,  H01L29/40 ,  H01L29/66 ,  H01L27/08

CPC classification number: H01L29/861 ,  H01L27/0814 ,  H01L29/0623 ,  H01L29/0684 ,  H01L29/407 ,  H01L29/41 ,  H01L29/45 ,  H01L29/66136

Abstract: A semiconductor device structure includes a region of semiconductor material with a first major surface and an opposing second major surface. A contact structure is disposed in a first portion of the region of semiconductor material and includes a tub structure extending from adjacent a first portion of the first major surface. A plurality of structures comprising portions of the region of semiconductor material extend outward from a lower surface of the tub structure. In some embodiments, the plurality of structures comprises a plurality of free-standing structures. A conductive material is disposed within the tub structure and laterally surrounding the plurality of structures. In one embodiment, the contact structure facilitates the fabrication of a monolithic series switching diode structure having a low-resistance substrate contact.