公开(公告)号：US09773895B2

公开(公告)日：2017-09-26

申请号：US15133644

申请日：2016-04-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Peter Moens ,  Mihir Mudholkar ,  Joe Fulton ,  Philip Celaya ,  Stephen St. Germain ,  Chun-Li Liu ,  Jason McDonald ,  Alexander Young ,  Ali Salih

IPC: H01L29/15 ,  H01L29/747 ,  H01L29/74 ,  H01L23/495 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778 ,  H01L25/11 ,  H03K17/687 ,  H01L23/00 ,  H01L27/088 ,  H01L21/8258 ,  H01L27/06

CPC classification number: H01L29/747 ,  H01L21/8258 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L25/115 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/205 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7416 ,  H01L29/742 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K2217/0009 ,  H03K2217/0018 ,  H01L2224/37099

Abstract: A half-bridge circuit can include a high-side HEMT, a high-side switch transistor, a low-side HEMT, and a low-side switch transistor. The die substrates of the HEMTs can be coupled to the sources of their corresponding switch transistors. In another aspect, a packaged electronic device for a half-bridge circuit can have a design that can use shorter connectors that help to reduce parasitic inductance and resistance. In a further aspect, a packaged electronic device for a half-bridge circuit can include more than one connection along the bottom of the package allows less lead connections along the periphery of the packaged electronic device and can allow for a smaller package.