公开(公告)号：US09748224B2

公开(公告)日：2017-08-29

申请号：US14853720

申请日：2015-09-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Jason McDonald ,  Ali Salih ,  Alexander Young

IPC: H01L29/66 ,  H01L27/06 ,  H01L27/02 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L21/8258 ,  H01L21/74 ,  H01L29/872 ,  H01L23/48 ,  H01L29/861 ,  H01L29/20

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a group III-V transistor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A clamping device is integrated with the group III-V transistor structure and is electrically connected to the first current carrying electrode a third electrode to provide a secondary current path during, for example, an electrical stress event.

公开(公告)号：US20170025336A1

公开(公告)日：2017-01-26

申请号：US15202826

申请日：2016-07-06

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Ali Salih ,  Mihir Mudholkar ,  Chun-Li Liu ,  Jason McDonald

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49575 ,  H01L23/49503 ,  H01L23/4951 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49534 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49558 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L2224/40105 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/41109 ,  H01L2224/41112 ,  H01L2224/41174 ,  H01L2224/48245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2224/37099 ,  H01L2224/45099

Abstract: In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure and a second device receiving structure and a contact extension that is common to the first and second device receiving structures. The first device receiving structure includes a device receiving area and the second device receiving structure includes a drain contact area. A III-N based semiconductor chip has a drain bond pad bonded to the drain contact area and a source bond pad bonded to the contact extension and a gate bond pad bonded to an interconnect. A portion of the silicon based semiconductor chip is bonded to the support device receiving area. In accordance with another embodiment, a method for manufacturing the semiconductor component includes coupling a III-N based semiconductor chip to a portion of the support a silicon based semiconductor chip to another portion of the support.

Abstract translation: 根据实施例，半导体部件包括具有第一器件接收结构和第二器件接收结构的支撑件以及第一和第二器件接收结构共同的接触延伸部。 第一器件接收结构包括器件接收区域，第二器件接收结构包括漏极接触区域。 基于III-N的半导体芯片具有焊接到漏极接触区域的漏极接合焊盘和接合到接触延伸部的源极接合焊盘和键合到互连的栅极焊盘焊盘。 硅基半导体芯片的一部分结合到支撑装置接收区域。 根据另一个实施例，制造半导体部件的方法包括将基于III-N的半导体芯片与载体的一部分将硅基半导体芯片耦合到支撑体的另一部分。

公开(公告)号：US10593666B2

公开(公告)日：2020-03-17

申请号：US16215870

申请日：2018-12-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Jason McDonald ,  Ali Salih ,  Alexander Young

IPC: H01L29/20 ,  H01L27/06 ,  H01L21/8258 ,  H01L21/74 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L27/02 ,  H01L29/872 ,  H01L23/48 ,  H01L29/861

Abstract: A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the first current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the second current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.

公开(公告)号：US09905500B2

公开(公告)日：2018-02-27

申请号：US15202826

申请日：2016-07-06

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Ali Salih ,  Mihir Mudholkar ,  Chun-Li Liu ,  Jason McDonald

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L23/49575 ,  H01L23/49503 ,  H01L23/4951 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49534 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49558 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L2224/40105 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/41109 ,  H01L2224/41112 ,  H01L2224/41174 ,  H01L2224/48245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2224/37099 ,  H01L2224/45099

Abstract: In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure and a second device receiving structure and a contact extension that is common to the first and second device receiving structures. The first device receiving structure includes a device receiving area and the second device receiving structure includes a drain contact area. A III-N based semiconductor chip has a drain bond pad bonded to the drain contact area and a source bond pad bonded to the contact extension and a gate bond pad bonded to an interconnect. A portion of the silicon based semiconductor chip is bonded to the support device receiving area. In accordance with another embodiment, a method for manufacturing the semiconductor component includes coupling a III-N based semiconductor chip to a portion of the support a silicon based semiconductor chip to another portion of the support.

公开(公告)号：US09773895B2

公开(公告)日：2017-09-26

申请号：US15133644

申请日：2016-04-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Peter Moens ,  Mihir Mudholkar ,  Joe Fulton ,  Philip Celaya ,  Stephen St. Germain ,  Chun-Li Liu ,  Jason McDonald ,  Alexander Young ,  Ali Salih

IPC: H01L29/15 ,  H01L29/747 ,  H01L29/74 ,  H01L23/495 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778 ,  H01L25/11 ,  H03K17/687 ,  H01L23/00 ,  H01L27/088 ,  H01L21/8258 ,  H01L27/06

CPC classification number: H01L29/747 ,  H01L21/8258 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L25/115 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/205 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7416 ,  H01L29/742 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K2217/0009 ,  H03K2217/0018 ,  H01L2224/37099

Abstract: A half-bridge circuit can include a high-side HEMT, a high-side switch transistor, a low-side HEMT, and a low-side switch transistor. The die substrates of the HEMTs can be coupled to the sources of their corresponding switch transistors. In another aspect, a packaged electronic device for a half-bridge circuit can have a design that can use shorter connectors that help to reduce parasitic inductance and resistance. In a further aspect, a packaged electronic device for a half-bridge circuit can include more than one connection along the bottom of the package allows less lead connections along the periphery of the packaged electronic device and can allow for a smaller package.

公开(公告)号：US10707203B2

公开(公告)日：2020-07-07

申请号：US16225930

申请日：2018-12-19

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Woochul Jeon ,  Jason McDonald

IPC: H01L27/06 ,  H01L21/8258 ,  H01L21/74 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L27/02 ,  H01L29/872 ,  H01L29/20 ,  H01L23/48 ,  H01L29/861

Abstract: A method for forming a cascode rectifier structure includes providing a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are provided adjacent a major surface of the heterostructure and a control electrode is provided between the first and second current carrying electrode. A rectifier device is provided integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is provided further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is provided as a two terminal device.

公开(公告)号：US10199373B2

公开(公告)日：2019-02-05

申请号：US15648211

申请日：2017-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Jason McDonald ,  Ali Salih ,  Alexander Young

IPC: H01L29/417 ,  H01L27/06 ,  H01L27/02 ,  H01L23/367 ,  H01L29/778 ,  H01L29/10 ,  H01L21/8258 ,  H01L21/74 ,  H01L29/872 ,  H01L23/48 ,  H01L29/861 ,  H01L29/20

Abstract: A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the first current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the second current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.

公开(公告)号：US09741711B2

公开(公告)日：2017-08-22

申请号：US14853729

申请日：2015-09-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Woochul Jeon ,  Jason McDonald

IPC: H01L29/66 ,  H01L21/70 ,  H01L27/06 ,  H01L27/02 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L21/8258 ,  H01L21/74 ,  H01L29/872 ,  H01L23/48 ,  H01L29/861 ,  H01L29/20

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes.