公开(公告)号：US10658389B2

公开(公告)日：2020-05-19

申请号：US15386017

申请日：2016-12-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Motomu Kurata ,  Shinya Sasagawa ,  Ryota Hodo ,  Katsuaki Tochibayashi ,  Tomoaki Moriwaka ,  Jiro Nishida ,  Hidekazu Miyairi ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L23/522 ,  H01L27/13 ,  H01L21/84 ,  H01L21/822

摘要： The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

公开(公告)号：US20150349127A1

公开(公告)日：2015-12-03

申请号：US14489074

申请日：2014-09-17

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Motomu Kurata ,  Shinya Sasagawa ,  Ryota Hodo ,  Katsuaki Tochibayashi ,  Tomoaki Moriwaka ,  Jiro Nishida ,  Hidekazu Miyairi ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L27/1207 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/5226 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/13 ,  H01L29/66969 ,  H01L29/7869

摘要： The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

摘要翻译： 半导体器件包括第一层，第一层包括第一晶体管，第二层，包括第一层上的第一绝缘膜，第三层，包括第二层上的第二绝缘膜;以及第四层，包括第三层上的第二晶体管 。 第一导电膜通过设置在第一绝缘膜中的开口将第一晶体管和第二晶体管彼此电连接。 第二导电膜通过设置在第二绝缘膜中的开口将第一晶体管，第二晶体管和第一导电膜彼此电连接。 第一晶体管的沟道形成区域包括单晶半导体。 第二晶体管的沟道形成区包括氧化物半导体。 第二导电膜的底面的宽度为5nm以下。

公开(公告)号：US11282860B2

公开(公告)日：2022-03-22

申请号：US16876286

申请日：2020-05-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Motomu Kurata ,  Shinya Sasagawa ,  Ryota Hodo ,  Katsuaki Tochibayashi ,  Tomoaki Moriwaka ,  Jiro Nishida ,  Hidekazu Miyairi ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L23/522 ,  H01L27/13 ,  H01L21/84 ,  H01L21/822

摘要： The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

公开(公告)号：US09553202B2

公开(公告)日：2017-01-24

申请号：US14489074

申请日：2014-09-17

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Motomu Kurata ,  Shinya Sasagawa ,  Ryota Hodo ,  Katsuaki Tochibayashi ,  Tomoaki Moriwaka ,  Jiro Nishida ,  Hidekazu Miyairi ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L27/1207 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/5226 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/13 ,  H01L29/66969 ,  H01L29/7869

摘要： The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

摘要翻译： 半导体器件包括第一层，第一层包括第一晶体管，第二层，包括第一层上的第一绝缘膜，第三层，包括第二层上的第二绝缘膜;以及第四层，包括第三层上的第二晶体管 。 第一导电膜通过设置在第一绝缘膜中的开口将第一晶体管和第二晶体管彼此电连接。 第二导电膜通过设置在第二绝缘膜中的开口将第一晶体管，第二晶体管和第一导电膜彼此电连接。 第一晶体管的沟道形成区域包括单晶半导体。 第二晶体管的沟道形成区域包括氧化物半导体。 第二导电膜的底面的宽度为5nm以下。