公开(公告)号：US20160284778A1

公开(公告)日：2016-09-29

申请号：US15082012

申请日：2016-03-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Yu YAMAZAKI ,  Ryota FUKUMOTO

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3291 ,  H01L51/52

CPC classification number: H01L27/3262 ,  G09G3/2022 ,  G09G3/3233 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2320/0219 ,  G09G2320/0233 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3276 ,  H01L29/78675 ,  H01L51/52 ,  H01L2251/5323 ,  H04M1/0266

Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

Abstract translation: 驱动晶体管的栅极的电位固定，并且驱动晶体管在饱和区域中工作，从而随时提供电流。 在线性区域中工作的电流控制晶体管与驱动晶体管串联布置，并且用于传输像素的发射或非发射信号的视频信号通过开关晶体管输入到电流控制晶体管的栅极。

公开(公告)号：US20160204178A1

公开(公告)日：2016-07-14

申请号：US15074255

申请日：2016-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC: H01L27/32 ,  H01L29/786

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

公开(公告)号：US20150155308A1

公开(公告)日：2015-06-04

申请号：US14618261

申请日：2015-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC: H01L27/12

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

公开(公告)号：US20180122884A1

公开(公告)日：2018-05-03

申请号：US15845459

申请日：2017-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L27/02

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

公开(公告)号：US20220406865A1

公开(公告)日：2022-12-22

申请号：US17893221

申请日：2022-08-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Yu YAMAZAKI ,  Ryota FUKUMOTO

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3291 ,  H01L27/12 ,  H04M1/02 ,  H01L51/52

Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

公开(公告)号：US20180019292A1

公开(公告)日：2018-01-18

申请号：US15636908

申请日：2017-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Yu YAMAZAKI ,  Ryota FUKUMOTO

IPC: H01L27/32 ,  H01L27/12 ,  H04M1/02 ,  H01L51/52 ,  G09G3/20 ,  H01L29/786

CPC classification number: H01L27/3262 ,  G09G3/2022 ,  G09G3/3233 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2320/0219 ,  G09G2320/0233 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3276 ,  H01L29/78675 ,  H01L51/52 ,  H01L2251/5323 ,  H04M1/0266

Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

公开(公告)号：US20140110732A1

公开(公告)日：2014-04-24

申请号：US14143652

申请日：2013-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC: H01L27/02

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract translation: 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。