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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200177132A1

    公开(公告)日：2020-06-04

    申请号：US16783306

    申请日：2020-02-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kei TAKAHASHI ,  Yoshifumi TANADA

    IPC: H03F1/02 ,  H03F3/45 ,  G05F1/46 ,  G05F1/56 ,  H03F1/34

    Abstract: Power consumption of a signal processing circuit is reduced. Further, power consumption of a semiconductor device including the signal processing circuit is reduced. The signal processing circuit includes a reference voltage generation circuit, a voltage divider circuit, an operational amplifier, a bias circuit for supplying bias current to the operational amplifier, and first and second holding circuits. The first holding circuit is connected between the reference voltage generation circuit and the bias circuit. The second holding circuit is connected between the voltage divider circuit and a non-inverting input terminal of the operational amplifier. Reference voltage from the reference voltage generation circuit and reference voltage from the voltage divider circuit can be held in the first and second holding circuits, respectively, so that the reference voltage generation circuit can stop operating. Thus, power consumption of the reference voltage generation circuit can be reduced.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180102741A1

    公开(公告)日：2018-04-12

    申请号：US15679203

    申请日：2017-08-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kei TAKAHASHI ,  Yoshifumi TANADA

    IPC: H03F1/02 ,  H03F1/34 ,  G05F1/56 ,  G05F1/46 ,  H03F3/45 ,  H02M3/156

    Abstract: Power consumption of a signal processing circuit is reduced. Further, power consumption of a semiconductor device including the signal processing circuit is reduced. The signal processing circuit includes a reference voltage generation circuit, a voltage divider circuit, an operational amplifier, a bias circuit for supplying bias current to the operational amplifier, and first and second holding circuits. The first holding circuit is connected between the reference voltage generation circuit and the bias circuit. The second holding circuit is connected between the voltage divider circuit and a non-inverting input terminal of the operational amplifier. Reference voltage from the reference voltage generation circuit and reference voltage from the voltage divider circuit can be held in the first and second holding circuits, respectively, so that the reference voltage generation circuit can stop operating. Thus, power consumption of the reference voltage generation circuit can be reduced.

    PULSE OUTPUT CIRCUIT AND SEMICONDUCTOR DEVICE
    5.
    发明申请
    PULSE OUTPUT CIRCUIT AND SEMICONDUCTOR DEVICE 有权
    脉冲输出电路和半导体器件

    公开(公告)号：US20140002426A1

    公开(公告)日：2014-01-02

    申请号：US13922685

    申请日：2013-06-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yoshifumi TANADA ,  Manabu SATO ,  Hiroyuki MIYAKE ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

    IPC: H03K3/01

    CPC classification number: H03K3/01 ,  G09G3/3688 ,  G11C19/28

    Abstract: A highly reliable semiconductor device in which a shift in threshold voltage of a transistor due to deterioration can be inhibited is provided. A pulse output circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. A clock signal is supplied to a drain of the first transistor. A first power supply potential is applied to a source of the second transistor, and a drain of the second transistor is connected to the drain of the first transistor. A second power supply potential is applied to a drain of the third transistor. The first power supply potential is applied to a source of the fourth transistor, and a drain of the fourth transistor is connected to the drain of the third transistor. The first power supply potential is applied to a source of the fifth transistor, and a drain of the fifth transistor is connected to a gate of the third transistor. One of a source and a drain of the sixth transistor is connected to the drain of the first transistor, and the other of the source and the drain of the sixth transistor is connected to the gate of the third transistor. The first transistor and the third transistor include back gates connected to each other. The first to sixth transistors have the same conductivity type.

    Abstract translation: 提供了一种高可靠性的半导体器件，其中可以抑制由于劣化导致的晶体管的阈值电压偏移。 脉冲输出电路包括第一晶体管，第二晶体管，第三晶体管，第四晶体管，第五晶体管和第六晶体管。 时钟信号被提供给第一晶体管的漏极。 第一电源电位施加到第二晶体管的源极，第二晶体管的漏极连接到第一晶体管的漏极。 第二电源电位被施加到第三晶体管的漏极。 第一电源电位被施加到第四晶体管的源极，并且第四晶体管的漏极连接到第三晶体管的漏极。 第一电源电位施加到第五晶体管的源极，第五晶体管的漏极连接到第三晶体管的栅极。 第六晶体管的源极和漏极之一连接到第一晶体管的漏极，第六晶体管的源极和漏极中的另一个连接到第三晶体管的栅极。 第一晶体管和第三晶体管包括彼此连接的后栅极。 第一至第六晶体管具有相同的导电类型。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140110732A1

    公开(公告)日：2014-04-24

    申请号：US14143652

    申请日：2013-12-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

    IPC: H01L27/02

    CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

    Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

    Abstract translation: 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

    PIXEL CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE
    8.
    发明申请
    PIXEL CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE 有权
    像素电路，显示设备和电子设备

    公开(公告)号：US20130307421A1

    公开(公告)日：2013-11-21

    申请号：US13890357

    申请日：2013-05-09

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yoshifumi TANADA

    IPC: H05B37/00

    CPC classification number: H05B37/00 ,  G09G3/2022 ,  G09G3/3659 ,  G09G2300/0857

    Abstract: An object is to enable application of forward/reverse voltage to or forward/reverse current to a display element and to lower power consumption of a driver circuit for driving a pixel. A memory storing the potential of a source signal line input through a switch, a first transistor whose gate is supplied with one output of the memory, a second transistor whose gate is supplied with the other output of the memory, a display element electrically connected to one of a source a drain of a first transistor and one of a source and a drain of a second transistor, a power source line electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor, and a counter power source electrically connected to the display element are included.

    Abstract translation: 目的是使能向显示元件施加正向/反向电压或正向/反向电流，并降低用于驱动像素的驱动电路的功耗。 存储存储通过开关输入的源极信号线的电位的存储器，其栅极被提供有存储器的一个输出的第一晶体管，其栅极被提供有存储器的另一个输出的第二晶体管，显示元件电连接到 源极之一，第一晶体管的漏极和第二晶体管的源极和漏极中的一个，电源线，其电连接到第一晶体管的源极和漏极中的另一个，以及源极和源极的另一个 包括第二晶体管的漏极和电连接到显示元件的反电源。

    DISPLAY DEVICE, AND METHOD OF OPERATION THEREOF
    9.
    发明申请
    DISPLAY DEVICE, AND METHOD OF OPERATION THEREOF 有权
    显示装置及其操作方法

    公开(公告)号：US20130076775A1

    公开(公告)日：2013-03-28

    申请号：US13681906

    申请日：2012-11-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yu KOJIMA ,  Yuko TACHIMURA ,  Shunpei YAMAZAKI ,  Yoshifumi TANADA

    IPC: G09G5/02

    CPC classification number: G09G5/02 ,  G02F1/133615 ,  G09G3/3216 ,  G09G3/3233 ,  G09G3/3406 ,  G09G2300/06 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0847 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/027 ,  G09G2320/0626 ,  G09G2320/0646 ,  G09G2360/16

    Abstract: It is an object of the invention to provide a display device which performs high grayscale display in accordance with display contents and a game machine with an improved realistic sensation. The invention is a display device characterized by including a pixel portion which performs display based on a video signal and a driver circuit portion inputted with the video signal, wherein the driver circuit portion has a unit for controlling a grayscale in accordance with display of the pixel portion. In a liquid crystal display device, luminance of a lighting unit is controlled based on a signal from the unit for controlling a grayscale whereas a current supplied to a light emitting element is controlled in a light emitting device. By applying such a display device to a game machine, a realistic sensation can be improved.

    Abstract translation: 本发明的目的是提供一种根据显示内容执行高灰阶显示的显示装置和具有改进的逼真感的游戏机。 本发明是一种显示装置，其特征在于包括：基于视频信号执行显示的像素部分和输入视频信号的驱动器电路部分，其中驱动器电路部分具有根据像素的显示来控制灰度的单元 一部分。 在液晶显示装置中，基于来自用于控制灰阶的单元的信号控制照明单元的亮度，而在发光装置中控制提供给发光元件的电流。 通过将这种显示装置应用于游戏机，可以提高逼真的感觉。

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