公开(公告)号：US20180047753A1

公开(公告)日：2018-02-15

申请号：US15723227

申请日：2017-10-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Yoshinori IEDA ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Kenichi OKAZAKI ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC: H01L27/12 ,  H01L27/06 ,  H01L27/088

CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

公开(公告)号：US20140001467A1

公开(公告)日：2014-01-02

申请号：US13922693

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Takashi HAMOCHI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: To provide a semiconductor device including an oxide semiconductor in which a change in electrical characteristics is suppressed or whose reliability is improved. In a semiconductor device including an oxide semiconductor film in which a channel formation region is formed, an insulating film which suppresses entry of water and contains at least nitrogen and an insulating film which suppresses entry of nitrogen released form the insulating film are provided over the oxide semiconductor film. As water entering the oxide semiconductor film, water contained in the air, water in a film provided over the insulating film which suppresses entry of water, or the like can be given. Further, as the insulating film which suppresses entry of water, a nitride insulating film can be used, and the amount of hydrogen molecules released by heating from the nitride insulating film is smaller than 5.0×1021 molecules/cm3.

Abstract translation: 提供一种包括氧化物半导体的半导体器件，其中电特性的变化被抑制或其可靠性提高。 在包括其中形成沟道形成区域的氧化物半导体膜的半导体器件中，在氧化物上设置绝缘膜，其抑制水的入口并且至少包含氮和绝缘膜，所述绝缘膜抑制从绝缘膜释放的氮的进入 半导体膜。 当进入氧化物半导体膜的水中，可以给出包含在空气中的水，设置在绝缘膜上的膜中的水，以抑制水的进入等。 此外，作为抑制水的侵入的绝缘膜，可以使用氮化物绝缘膜，通过加热从氮化物绝缘膜释放的氢分子的量小于5.0×1021分子/ cm 3。

公开(公告)号：US20130320848A1

公开(公告)日：2013-12-05

申请号：US13900907

申请日：2013-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Kenichi OKAZAKI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Shunpei YAMAZAKI

IPC: H05B37/02

CPC classification number: H05B37/02 ,  G09G3/3258 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/043 ,  G09G2320/045 ,  Y02B20/42

Abstract: A light-emitting device that is less influenced by variations in threshold voltage of a transistor is provided. Further, a light-emitting device in which variations in luminance due to variations in threshold voltage of a transistor can be reduced is provided. Further, influences due to variations in threshold voltage of a transistor are corrected in a short time. A light-emitting element, a transistor functioning as a switch supplying current to the light-emitting element, and a circuit in which threshold voltage of the transistor is obtained and voltage between a gate and a source (gate voltage) of the transistor is corrected in accordance with the obtained threshold voltage are included. An n-channel transistor in which threshold voltage changes in a positive direction and the amount of the change is small is used. When the threshold voltage of the transistor is obtained, the gate voltage of the transistor is adjusted as appropriate.

Abstract translation: 提供了较少受到晶体管的阈值电压变化影响的发光器件。 此外，提供了可以减少由于晶体管的阈值电压的变化引起的亮度变化的发光装置。 此外，由于晶体管的阈值电压的变化引起的影响在短时间内被校正。 发光元件，用作向发光元件提供电流的开关的晶体管和获得晶体管的阈值电压并且校正晶体管的栅极和源极（栅极电压）之间的电压的电路 根据获得的阈值电压。 使用其中阈值电压在正方向上变化并且变化量小的n沟道晶体管。 当获得晶体管的阈值电压时，适当调整晶体管的栅极电压。

公开(公告)号：US20130299820A1

公开(公告)日：2013-11-14

申请号：US13875507

申请日：2013-05-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Kenichi OKAZAKI

IPC: H01L29/786

CPC classification number: H01L29/66969 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

公开(公告)号：US20160372492A1

公开(公告)日：2016-12-22

申请号：US15251375

申请日：2016-08-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Yoshinori IEDA ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Kenichi OKAZAKI ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC: H01L27/12 ,  H01L27/06

CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

Abstract translation: 提供一种防止在包括氧化物半导体的晶体管中氢扩散到氧化物半导体膜中的氮化物绝缘膜。 此外，提供了通过使用包括硅半导体的晶体管和包括氧化物半导体的晶体管具有良好的电特性的半导体器件。 在包括硅半导体的晶体管和包括氧化物半导体的晶体管之间提供具有不同功能的两个氮化物绝缘膜。 具体地说，在包括硅半导体的晶体管上设置含有氢的第一氮化物绝缘膜，并且在第一氮化物绝缘膜之间具有比第一氮化物绝缘膜低的氢含量并用作阻止氢的阻挡膜的第二氮化物绝缘膜 第一氮化物绝缘膜和包括氧化物半导体的晶体管。

公开(公告)号：US20160247903A1

公开(公告)日：2016-08-25

申请号：US15147105

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Shunpei YAMAZAKI ,  Toshinari SASAKI

IPC: H01L29/66 ,  H01L27/12 ,  H01L21/4757 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02565 ,  H01L21/47573 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.

公开(公告)号：US20160028034A1

公开(公告)日：2016-01-28

申请号：US14801331

申请日：2015-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Masafumi NOMURA ,  Toshiyuki MIYAMOTO

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/003 ,  H01L2251/5338

Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.

Abstract translation: 公开了一种用于制造柔性半导体器件的方法。 该方法包括：在衬底上形成金属的分离层; 在含有氮，氧，硅和氢的气氛下用等离子体处理分离层; 在等离子体处理的分离层上形成层，该层能够向分离层供应氢和氮; 在分离层上形成功能层; 进行热处理以促进从该层释放氢和氮; 并在分离层处分离衬底。 该方法允许在分离层上形成极薄的氧化物层，这便于分离，降低了氧化层保留在该层之下的可能性，并且有助于提高包括在功能层中的器件的效率。

公开(公告)号：US20130270549A1

公开(公告)日：2013-10-17

申请号：US13833389

申请日：2013-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi OKAZAKI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Shunpei YAMAZAKI ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02565 ,  H01L21/47573 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.

Abstract translation: 在包括氧化物半导体的半导体器件中，氧空位的量减少。 此外，提高了包括氧化物半导体的半导体器件的电特性。 半导体器件包括晶体管，其包括在衬底上的栅电极，覆盖栅电极的栅极绝缘膜，与栅电极重叠的氧化物半导体膜，其间设置有栅极绝缘膜，以及与氧化物接触的一对电极 半导体膜; 并且在所述晶体管上方，覆盖所述栅极绝缘膜，所述氧化物半导体膜和所述一对电极的第一绝缘膜; 以及覆盖所述第一绝缘膜的第二绝缘膜。 第一绝缘膜的蚀刻速率低于或等于10nm / min，并且当在25℃下用0.5重量％的氢氟酸进行蚀刻时，蚀刻速率低于第二绝缘膜的蚀刻速率。

公开(公告)号：US20180145138A1

公开(公告)日：2018-05-24

申请号：US15874227

申请日：2018-01-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Takashi HAMOCHI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/247 ,  H01L29/78606 ,  H01L29/7869

Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.

公开(公告)号：US20150236168A1

公开(公告)日：2015-08-20

申请号：US14706282

申请日：2015-05-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/66969 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

Abstract translation: 提供了一种高度可靠的半导体器件，其产量可以防止由于静电放电损坏而降低。 提供了一种半导体器件，其包括栅极电极层，栅极电极层上的第一栅极绝缘层，在第一栅极绝缘层之上并且具有比第一栅极绝缘层更小的厚度的第二栅极绝缘层，氧化物半导体 层，以及与氧化物半导体层电连接的源电极层和漏电极层。 第一栅极绝缘层含有氮，并且对应于在电子自旋共振光谱法中出现在g-因子2.003处的信号，其自旋密度为1×1017自旋/ cm3或更小。 第二栅极绝缘层含有氮并且具有比第一栅极绝缘层低的氢浓度。