公开(公告)号：US20240234432A1

公开(公告)日：2024-07-11

申请号：US18616403

申请日：2024-03-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Toshinari SASAKI ,  Miyuki HOSOBA

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US20240079479A1

公开(公告)日：2024-03-07

申请号：US18388883

申请日：2023-11-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/022 ,  H01L21/02263 ,  H01L27/1225 ,  H01L29/513 ,  H01L29/78609 ,  H01L29/7869

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20210366944A1

公开(公告)日：2021-11-25

申请号：US17396832

申请日：2021-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US20200287026A1

公开(公告)日：2020-09-10

申请号：US16878758

申请日：2020-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/786 ,  H01L27/12

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20190273163A1

公开(公告)日：2019-09-05

申请号：US16413860

申请日：2019-05-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/146 ,  H01L29/66

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US20180182894A1

公开(公告)日：2018-06-28

申请号：US15904830

申请日：2018-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuhei SATO ,  Keiji SATO ,  Toshinari SASAKI ,  Tetsunori MARUYAMA ,  Atsuo ISOBE ,  Tsutomu MURAKAWA ,  Sachiaki TEZUKA

IPC: H01L29/786 ,  H01L21/477

CPC classification number: H01L29/7869 ,  H01L21/477

Abstract: To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.

公开(公告)号：US20170271519A1

公开(公告)日：2017-09-21

申请号：US15605211

申请日：2017-05-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Hitomi SATO ,  Kosei NODA ,  Yuta ENDO ,  Mizuho IKARASHI ,  Keitaro IMAI ,  Atsuo ISOBE ,  Yutaka OKAZAKI

IPC: H01L29/786 ,  H01L29/66

Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

公开(公告)号：US20170125601A1

公开(公告)日：2017-05-04

申请号：US15401460

申请日：2017-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Toshinari SASAKI ,  Shuhei YOKOYAMA ,  Takashi HAMOCHI

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/31 ,  H01L29/66 ,  H01L21/385 ,  H01L29/04 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/385 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US20170062623A1

公开(公告)日：2017-03-02

申请号：US15351775

申请日：2016-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/146 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/15 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

Abstract translation: 抑制了包括作为半导体膜的氧化物半导体的晶体管上的层间绝缘膜的半导体器件的电特性的变化。 该结构包括第一绝缘膜，其包括在半导体膜上方的由源电极和漏极形成的阶梯区域中的空隙部分，并且包含氧化硅作为部件，并且包含氮化硅的第二绝缘膜，其设置在 与第一绝缘膜接触以覆盖第一绝缘膜中的空隙部分。 该结构可以防止第一绝缘膜中产生的空隙部向外扩展。

公开(公告)号：US20160247903A1

公开(公告)日：2016-08-25

申请号：US15147105

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Shunpei YAMAZAKI ,  Toshinari SASAKI

IPC: H01L29/66 ,  H01L27/12 ,  H01L21/4757 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02565 ,  H01L21/47573 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.