公开(公告)号：US20130200372A1

公开(公告)日：2013-08-08

申请号：US13795526

申请日：2013-03-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshiharu HIRAKATA ,  Yukie NEMOTO

IPC: H01L29/786

CPC classification number: H01L29/786 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/78696

Abstract: The present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode.

Abstract translation: 本发明提供了可以提高电流 - 电压特性的TFT的结构。 本发明涉及一种薄膜晶体管，其包括层叠层，其中依次层叠第一导电膜，第一绝缘膜和第二导电膜，形成为与层叠层的侧表面接触的半导体膜 以及通过第二绝缘膜覆盖半导体膜的第三导电膜。 第一导电膜和第二导电膜是源电极和漏电极，与第一绝缘膜和第三导电膜接触的区域是半导体膜中的沟道形成区域，第三导电膜是 栅电极。

公开(公告)号：US20160358977A1

公开(公告)日：2016-12-08

申请号：US15174293

申请日：2016-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroko ABE ,  Yukie NEMOTO ,  Ryoji NOMURA ,  Mikio YUKAWA

IPC: H01L27/24 ,  H01L23/66 ,  H01L27/28 ,  H01L45/00 ,  H01L51/00

CPC classification number: H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

公开(公告)号：US20150144858A1

公开(公告)日：2015-05-28

申请号：US14614961

申请日：2015-02-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroko ABE ,  Yukie NEMOTO ,  Ryoji NOMURA ,  Mikio YUKAWA

IPC: H01L27/24 ,  H01L23/66 ,  H01L27/28 ,  H01L45/00 ,  H01L51/00

CPC classification number: H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Abstract translation: 本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。 本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作 天线。 存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。 用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。