公开(公告)号：US08987690B2

公开(公告)日：2015-03-24

申请号：US14287767

申请日：2014-05-27

Applicant: SEN Corporation

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Haruka Sasaki ,  Kouji Kato ,  Hitoshi Ando

IPC: H01J37/317 ,  H01J37/20 ,  C23C14/48 ,  H01J37/30 ,  H01J37/05 ,  A61N5/10 ,  G21K1/10

CPC classification number: H01J37/3172 ,  A61N5/1044 ,  G21K1/10 ,  H01J37/05 ,  H01J37/09 ,  H01J37/3007 ,  H01J37/3171

Abstract: A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

Abstract translation: 高能离子注入机包括一个束生成单元，它包括一个离子源和一个质量分析器，一个高能多级线性加速单元，一个改变高能离子束方向的高能束偏转单元 以及将偏转的高能离子束传送到晶片的光束传送单元。 光束传输单元包括光束整形器，高能束扫描器，高能束准直仪和高能最终能量滤光器。 此外，高能量射束准直仪是在通过电场执行加速度和高能量光束的减速的同时准直扫描光束的电场型光束准直仪。

公开(公告)号：US20140150723A1

公开(公告)日：2014-06-05

申请号：US14096735

申请日：2013-12-04

Applicant: SEN Corporation

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Hitoshi Ando ,  Kouji Inada ,  Tatsuya Yamada

IPC: C23C14/48

CPC classification number: H01J37/32412 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/10

Abstract: An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam.

Abstract translation: 离子注入装置包括：用于加速在离子源中产生的离子束的多个单元; 以及用于调整扫描光束并将离子注入晶片的多个单元。 具有相对的长直线部分的水平U形折叠型光束线包括多个单元，用于将长直线部分中的扫描光束调整为具有与离子源大致相同的长度和用于加速离子束的多个单元。

公开(公告)号：US20140353517A1

公开(公告)日：2014-12-04

申请号：US14287767

申请日：2014-05-27

Applicant: SEN CORPORATION

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Haruka Sasaki ,  Kouji Kato ,  Hitoshi Ando

IPC: H01J37/317

CPC classification number: H01J37/3172 ,  A61N5/1044 ,  G21K1/10 ,  H01J37/05 ,  H01J37/09 ,  H01J37/3007 ,  H01J37/3171

Abstract: A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

Abstract translation: 高能离子注入机包括一个束生成单元，它包括一个离子源和一个质量分析器，一个高能多级线性加速单元，一个改变高能离子束方向的高能束偏转单元 以及将偏转的高能离子束传送到晶片的光束传送单元。 光束传输单元包括光束整形器，高能束扫描器，高能束准直仪和高能最终能量滤光器。 此外，高能量射束准直仪是在通过电场执行加速度和高能量光束的减速的同时准直扫描光束的电场型光束准直仪。