公开(公告)号：US08952340B2

公开(公告)日：2015-02-10

申请号：US14313128

申请日：2014-06-24

Applicant: SEN Corporation

Inventor： Mitsuaki Kabasawa ,  Tatsuo Nishihara ,  Kazuhiro Watanabe ,  Yuuji Takahashi ,  Tatsuya Yamada

IPC: G21K1/08 ,  H01J3/14 ,  H01J3/26 ,  H01J49/42

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/0473 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/15 ,  H01J2237/30472

Abstract: A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

Abstract translation: 高频加速型离子加速和输送装置是通过具有相对于设定束能量的能量扩散的高频加速系统加速离子束之后的束线，并且包括能量分析偏转电磁体和水平束聚焦元件 。 在离子加速输送装置中，在能量分散和光束尺寸适当的位置处，另外设置由能量扩散限制狭缝和能量分析狭缝构成的双狭缝。 基于能量分析偏转电磁体和水平光束聚焦元件的条件确定位置，并且双缝执行能量分离和能量定义，并且通过在抑制时能够进行更小的能量扩展的调整来减小离子束的能量扩展 光束电流量的减少。

公开(公告)号：US20140352615A1

公开(公告)日：2014-12-04

申请号：US14290406

申请日：2014-05-29

Applicant: SEN Corporation

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Haruka Sasaki ,  Kouji Inada

IPC: C23C14/48

CPC classification number: H01J37/3171 ,  H01J2237/1518 ,  H05H7/04 ,  H05H9/045 ,  H05H2007/046

Abstract: A high-energy ion implanter includes a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam, a deflection unit that changes the direction of the high-energy ion beam toward a semiconductor wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy electric field type beam collimator, and a high-energy electric field type final energy filter.

Abstract translation: 高能离子注入机包括加速离子束以产生高能离子束的高能多级线性加速单元，将高能离子束朝向半导体的方向改变的偏转单元 晶片和将偏转的高能离子束传送到晶片的光束传输单元。 光束传输单元包括光束整形器，高能束扫描器，高能电场型光束准直仪和高能电场型最终能量滤光器。

公开(公告)号：US09208996B2

公开(公告)日：2015-12-08

申请号：US14077746

申请日：2013-11-12

Applicant: SEN Corporation

Inventor： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

IPC: H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/30472

Abstract: An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.

Abstract translation: 离子注入装置包括用于将离子从离子源输送到注入处理室的束线装置。 植入处理室包括用于相对于束照射区域机械地扫描工件的工件保持器。 束线装置可以在适合于将高能量/高电流束输送到工件中的低能量/高电流束的第一注入设置配置下运行，或者适于传输高能/低电流束的第二注入设置配置 低剂量注入工件。 在第一植入设置配置和第二植入设置配置中，在束线中作为参考的束中心轨迹从离子源到注入处理室相等。

公开(公告)号：US20140353517A1

公开(公告)日：2014-12-04

申请号：US14287767

申请日：2014-05-27

Applicant: SEN CORPORATION

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Haruka Sasaki ,  Kouji Kato ,  Hitoshi Ando

IPC: H01J37/317

CPC classification number: H01J37/3172 ,  A61N5/1044 ,  G21K1/10 ,  H01J37/05 ,  H01J37/09 ,  H01J37/3007 ,  H01J37/3171

Abstract: A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

Abstract translation: 高能离子注入机包括一个束生成单元，它包括一个离子源和一个质量分析器，一个高能多级线性加速单元，一个改变高能离子束方向的高能束偏转单元 以及将偏转的高能离子束传送到晶片的光束传送单元。 光束传输单元包括光束整形器，高能束扫描器，高能束准直仪和高能最终能量滤光器。 此外，高能量射束准直仪是在通过电场执行加速度和高能量光束的减速的同时准直扫描光束的电场型光束准直仪。

公开(公告)号：US20140374617A1

公开(公告)日：2014-12-25

申请号：US14313128

申请日：2014-06-24

Applicant: SEN CORPORATION

Inventor： Mitsuaki Kabasawa ,  Tatsuo Nishihara ,  Kazuhiro Watanabe ,  Yuuji Takahashi ,  Tatsuya Yamada

IPC: H01J3/26

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/0473 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/15 ,  H01J2237/30472

Abstract: A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

Abstract translation: 高频加速型离子加速和输送装置是通过具有相对于设定束能量的能量扩散的高频加速系统加速离子束之后的束线，并且包括能量分析偏转电磁体和水平束聚焦元件 。 在离子加速输送装置中，在能量分散和光束尺寸适当的位置处，另外设置由能量扩散限制狭缝和能量分析狭缝构成的双狭缝。 基于能量分析偏转电磁体和水平光束聚焦元件的条件确定位置，并且双缝执行能量分离和能量定义，并且通过在抑制时能够进行更小的能量扩展的调整来减小离子束的能量扩展 光束电流量的减少。

公开(公告)号：US20140366801A1

公开(公告)日：2014-12-18

申请号：US14302901

申请日：2014-06-12

Applicant: SEN CORPORATION

Inventor： Mitsuaki Kabasawa ,  Tatsuo Nishihara ,  Kazuhiro Watanabe ,  Yuuji Takahashi ,  Tatsuya Yamada

IPC: H01L21/02

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/12 ,  H01J2237/14

Abstract: A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The deflection unit is configured by a plurality of deflection electromagnets, and at least a horizontal focusing element is inserted between the plurality of deflection electromagnets.

Abstract translation: 高能离子注入机包括：束生成单元，其包括离子源和质量分析器; 高能量多级线性加速单元，其加速离子束以产生高能离子束; 高能量束偏转单元，其将高能离子束的朝向晶片的方向改变; 以及将偏转的高能离子束输送到晶片的光束传送单元。 偏转单元由多个偏转电磁体构成，并且在多个偏转电磁体之间插入至少一个水平聚焦元件。

公开(公告)号：US20140345522A1

公开(公告)日：2014-11-27

申请号：US14286083

申请日：2014-05-23

Applicant: SEN Corporation

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Haruka Sasaki ,  Kouji Inada ,  Makoto Sano

IPC: H01L21/265 ,  H01L21/67

CPC classification number: H01L21/26506 ,  H01J37/05 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/04737 ,  H01J2237/053 ,  H01J2237/057

Abstract: A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter.

Abstract translation: 高能离子注入机包括：束生成单元，其包括离子源和质谱仪; 射频多级线性加速单元; 偏转单元，其包括用于通过动量对离子进行过滤的磁场型能量分析装置; 梁输送线单元; 和基板处理/供给单元。 在该装置中，除了磁场型质谱仪之外，还在电场型光束准直仪和晶片之间插入通过电场使高能扫描光束在垂直方向上偏转的电场型最终能量过滤器， 作为动力滤波器的磁场型能量分析装置和作为速度滤波器的射频多级线性加速装置。

公开(公告)号：US08987690B2

公开(公告)日：2015-03-24

申请号：US14287767

申请日：2014-05-27

Applicant: SEN Corporation

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Haruka Sasaki ,  Kouji Kato ,  Hitoshi Ando

IPC: H01J37/317 ,  H01J37/20 ,  C23C14/48 ,  H01J37/30 ,  H01J37/05 ,  A61N5/10 ,  G21K1/10

CPC classification number: H01J37/3172 ,  A61N5/1044 ,  G21K1/10 ,  H01J37/05 ,  H01J37/09 ,  H01J37/3007 ,  H01J37/3171

Abstract: A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

Abstract translation: 高能离子注入机包括一个束生成单元，它包括一个离子源和一个质量分析器，一个高能多级线性加速单元，一个改变高能离子束方向的高能束偏转单元 以及将偏转的高能离子束传送到晶片的光束传送单元。 光束传输单元包括光束整形器，高能束扫描器，高能束准直仪和高能最终能量滤光器。 此外，高能量射束准直仪是在通过电场执行加速度和高能量光束的减速的同时准直扫描光束的电场型光束准直仪。

公开(公告)号：US20150064888A1

公开(公告)日：2015-03-05

申请号：US14468844

申请日：2014-08-26

Applicant: SEN Corporation

Inventor： Takanori Yagita ,  Mitsuaki Kabasawa ,  Haruka Sasaki

IPC: H01J37/24 ,  H01J37/10 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01J37/243 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/10 ,  H01J2237/30472

Abstract: An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens.

Abstract translation: 离子注入装置包括光束并联单元和第三电源单元。 光束并行化单元包括加速透镜和在离子束输送方向上与加速透镜相邻设置的减速透镜。 第三电源单元在多个能量设置之一下操作光束并联单元。 多个能量设置包括适于运输低能量离子的第一能量设定和适于运输高能离子束的第二能量设定。 第三电源单元被配置为在第二能量设定下至少在加速透镜中产生电位差，并且在第一能量设定下产生至少减速透镜的电位差。 减速透镜的曲率小于加速度透镜的曲率。

公开(公告)号：US20140150723A1

公开(公告)日：2014-06-05

申请号：US14096735

申请日：2013-12-04

Applicant: SEN Corporation

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Hitoshi Ando ,  Kouji Inada ,  Tatsuya Yamada

IPC: C23C14/48

CPC classification number: H01J37/32412 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/10

Abstract: An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam.

Abstract translation: 离子注入装置包括：用于加速在离子源中产生的离子束的多个单元; 以及用于调整扫描光束并将离子注入晶片的多个单元。 具有相对的长直线部分的水平U形折叠型光束线包括多个单元，用于将长直线部分中的扫描光束调整为具有与离子源大致相同的长度和用于加速离子束的多个单元。