HIGH-ENERGY ION IMPLANTER, BEAM COLLIMATOR, AND BEAM COLLIMATION METHOD
    1.
    发明申请
    HIGH-ENERGY ION IMPLANTER, BEAM COLLIMATOR, AND BEAM COLLIMATION METHOD 有权
    高能离子植入物,光束聚合物和光束收集方法

    公开(公告)号:US20150228454A1

    公开(公告)日:2015-08-13

    申请号:US14618630

    申请日:2015-02-10

    Abstract: A beam collimator includes a plurality of lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes out from an exit of the beam collimator. Each of the plurality of lens units forms a bow-shaped curved gap and is formed such that an angle of a beam traveling direction with respect to the reference trajectory is changed by an electric field generated in the bow-shaped curved gap. A vacant space is provided between one lens unit of the plurality of lens units and a lens unit that is adjacent to the lens unit. The vacant space is directed in a transverse direction of the collimated beam in a cross section that is perpendicular to the reference trajectory. An inner field containing the reference trajectory is connected to an outer field of the plurality of lens units through the vacant space.

    Abstract translation: 光束准直仪包括沿着参考轨迹布置的多个透镜单元,使得准直到参考轨迹的光束从光束准直仪的出口出来。 多个透镜单元中的每一个形成弓形弯曲间隙,并且形成为使得相对于基准轨迹的光束移动方向的角度由弓形弯曲间隙中产生的电场改变。 在多个透镜单元的一个透镜单元和与透镜单元相邻的透镜单元之间设置有空白空间。 在垂直于参考轨迹的横截面中,空白空间被引导在准直光束的横向方向上。 包含参考轨迹的内部场通过空置空间连接到多个透镜单元的外部场。

    HIGH-ENERGY ION IMPLANTER
    2.
    发明申请
    HIGH-ENERGY ION IMPLANTER 有权
    高能离子植绒

    公开(公告)号:US20140353517A1

    公开(公告)日:2014-12-04

    申请号:US14287767

    申请日:2014-05-27

    Abstract: A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

    Abstract translation: 高能离子注入机包括一个束生成单元,它包括一个离子源和一个质量分析器,一个高能多级线性加速单元,一个改变高能离子束方向的高能束偏转单元 以及将偏转的高能离子束传送到晶片的光束传送单元。 光束传输单元包括光束整形器,高能束扫描器,高能束准直仪和高能最终能量滤光器。 此外,高能量射束准直仪是在通过电场执行加速度和高能量光束的减速的同时准直扫描光束的电场型光束准直仪。

    High-energy ion implanter
    3.
    发明授权
    High-energy ion implanter 有权
    高能离子注入机

    公开(公告)号:US08987690B2

    公开(公告)日:2015-03-24

    申请号:US14287767

    申请日:2014-05-27

    Abstract: A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

    Abstract translation: 高能离子注入机包括一个束生成单元,它包括一个离子源和一个质量分析器,一个高能多级线性加速单元,一个改变高能离子束方向的高能束偏转单元 以及将偏转的高能离子束传送到晶片的光束传送单元。 光束传输单元包括光束整形器,高能束扫描器,高能束准直仪和高能最终能量滤光器。 此外,高能量射束准直仪是在通过电场执行加速度和高能量光束的减速的同时准直扫描光束的电场型光束准直仪。

    HIGH ENERGY ION IMPLANTER, BEAM CURRENT ADJUSTER, AND BEAM CURRENT ADJUSTMENT METHOD
    4.
    发明申请
    HIGH ENERGY ION IMPLANTER, BEAM CURRENT ADJUSTER, AND BEAM CURRENT ADJUSTMENT METHOD 有权
    高能离子植入物,光束电流调节器和光束电流调整方法

    公开(公告)号:US20150136996A1

    公开(公告)日:2015-05-21

    申请号:US14549016

    申请日:2014-11-20

    Abstract: A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

    Abstract translation: 用于离子注入机的束流调节器包括设置在离子束聚焦点或其附近的可变孔径装置。 可变孔径装置被配置为在焦点处调整垂直于离子束聚焦方向的方向上的离子束宽度,以便控制注入束电流。 可变孔径装置可以紧靠质量分析狭缝的下游设置。 束电流调节器可以设置有包括高能多级线性加速单元的高能离子注入机。

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