公开(公告)号：US20140065737A1

公开(公告)日：2014-03-06

申请号：US14013862

申请日：2013-08-29

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Tadanobu Kagawa ,  Toshio Yumiyama ,  Akira Funai ,  Takashi Kuroda

IPC: H01L21/66 ,  C23C14/48

CPC classification number: H01L22/14 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0206

Abstract: Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.

Abstract translation: 提供了一种将由离子源产生的离子输送到晶片并且通过在晶片上照射离子束将离子注入晶片的离子注入方法，包括在离子注入晶片期间使用多个检测单元， 可以基于具有放电可能性的检测事件的存在和事件对离子束的影响程度来检测具有放电可能性的事件和确定离子束的状态。

公开(公告)号：US20130196492A1

公开(公告)日：2013-08-01

申请号：US13748288

申请日：2013-01-23

Applicant: Sen Corporation

Inventor： Shiro NINOMIYA ,  Yasuharu Okamoto ,  Toshio Yumiyama ,  Akihiro Ochi

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/20228

Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

Abstract translation: 在半导体晶片的平面上，包括全长非离子注入区域和部分离子注入区域的两种类型的面内区域在与离子的扫描方向正交的方向上交替排列一次或多次 梁被创建。 在部分离子注入区域的创建期间，可以重复使用离子束的往复扫描，直到在可以固定半导体晶片的状态下执行或停止对半导体晶片的离子束辐射的同时满足目标剂量。 在全宽非离子注入区域的创建期间，可以移动半导体晶片而不对半导体晶片执行离子束辐射。 然后，通过重复半导体晶片的固定和移动多次，在半导体晶片的期望区域中产生离子注入区域和非离子注入区域。

公开(公告)号：US20130256566A1

公开(公告)日：2013-10-03

申请号：US13839753

申请日：2013-03-15

Applicant: SEN CORPORATION

Inventor： Hiroyuki KARIYA ,  Masaki Ishikawa ,  Yoshiaki Inda ,  Takeshi Kurose ,  Takanori Yagita ,  Toshio Yumiyama

IPC: H01L21/67

CPC classification number: H01J37/3171 ,  H01J37/147 ,  H01J37/304 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01L21/265 ,  H01L21/67213

Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

Abstract translation: 通过多个静止光束测量仪器和可移动或静止的光束测量装置测量离子束的垂直分布，水平分布和积分电流值。 在离子注入之前的光束电流调节阶段，控制装置同时执行将束电流调节到束电流的预设值中的至少一个，调整水平射束尺寸，以确保水平离子束的均匀性 基于静止光束测量仪器和可动或静止光束测量装置的测量值确保垂直离子注入分布的均匀性所必需的垂直光束尺寸的密度和密度和调整。

公开(公告)号：US09305784B2

公开(公告)日：2016-04-05

申请号：US13748288

申请日：2013-01-23

Applicant: SEN CORPORATION

Inventor： Shiro Ninomiya ,  Yasuharu Okamoto ,  Toshio Yumiyama ,  Akihiro Ochi

IPC: A61N5/00 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/20228

Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

Abstract translation: 在半导体晶片的平面上，包括全长非离子注入区域和部分离子注入区域的两种类型的面内区域在与离子的扫描方向正交的方向上交替排列一次或多次 梁被创建。 在部分离子注入区域的创建期间，可以重复使用离子束的往复扫描，直到在可以固定半导体晶片的状态下执行或停止对半导体晶片的离子束辐射的同时满足目标剂量。 在全宽非离子注入区域的创建期间，可以移动半导体晶片而不对半导体晶片执行离子束辐射。 然后，通过重复半导体晶片的固定和移动多次，在半导体晶片的期望区域中产生离子注入区域和非离子注入区域。

公开(公告)号：US08692216B2

公开(公告)日：2014-04-08

申请号：US13839753

申请日：2013-03-15

Applicant: Sen Corporation

Inventor： Hiroyuki Kariya ,  Masaki Ishikawa ,  Yoshiaki Inda ,  Takeshi Kurose ,  Takanori Yagita ,  Toshio Yumiyama

IPC: H01J37/147 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/147 ,  H01J37/304 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01L21/265 ,  H01L21/67213

Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

Abstract translation: 通过多个静止光束测量仪器和可移动或静止的光束测量装置测量离子束的垂直分布，水平分布和积分电流值。 在离子注入之前的光束电流调节阶段，控制装置同时执行将束电流调节到束电流的预设值中的至少一个，调整水平射束尺寸，以确保水平离子束的均匀性 基于静止光束测量仪器和可动或静止光束测量装置的测量值确保垂直离子注入分布的均匀性所必需的垂直光束尺寸的密度和密度和调整。