公开(公告)号：US20140017825A1

公开(公告)日：2014-01-16

申请号：US13939908

申请日：2013-07-11

Applicant: Sen Corporation

Inventor： Shiro Ninomiya ,  Akihiro Ochi

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30483

Abstract: The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.

Abstract translation: 离子注入方法包括使用混合扫描预先设置离子注入期间的物体的离子束扫描速度和机械扫描速度，并且基于设定的离子束扫描速度和所设定的物体的机械扫描速度来注入离子。 在预先设定的情况下，基于根据照射离子的物体的表面轮廓分别改变的离子束扫描振幅各自设定离子束扫描速度，使离子束扫描频率保持恒定， 离子束扫描幅度的任何一个以及对应于离子束扫描速度的物体的机械扫描速度被设定为使得要注入物体表面的每单位面积的离子注入剂量保持恒定。

公开(公告)号：US09646837B2

公开(公告)日：2017-05-09

申请号：US13710174

申请日：2012-12-10

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Yasuharu Okamoto ,  Masaki Ishikawa ,  Takeshi Kurose ,  Akihiro Ochi

IPC: H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01L21/265 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30477 ,  H01J2237/30488

Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

公开(公告)号：US20130196492A1

公开(公告)日：2013-08-01

申请号：US13748288

申请日：2013-01-23

Applicant: Sen Corporation

Inventor： Shiro NINOMIYA ,  Yasuharu Okamoto ,  Toshio Yumiyama ,  Akihiro Ochi

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/20228

Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

Abstract translation: 在半导体晶片的平面上，包括全长非离子注入区域和部分离子注入区域的两种类型的面内区域在与离子的扫描方向正交的方向上交替排列一次或多次 梁被创建。 在部分离子注入区域的创建期间，可以重复使用离子束的往复扫描，直到在可以固定半导体晶片的状态下执行或停止对半导体晶片的离子束辐射的同时满足目标剂量。 在全宽非离子注入区域的创建期间，可以移动半导体晶片而不对半导体晶片执行离子束辐射。 然后，通过重复半导体晶片的固定和移动多次，在半导体晶片的期望区域中产生离子注入区域和非离子注入区域。

公开(公告)号：US09305784B2

公开(公告)日：2016-04-05

申请号：US13748288

申请日：2013-01-23

Applicant: SEN CORPORATION

Inventor： Shiro Ninomiya ,  Yasuharu Okamoto ,  Toshio Yumiyama ,  Akihiro Ochi

IPC: A61N5/00 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/20228

Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

Abstract translation: 在半导体晶片的平面上，包括全长非离子注入区域和部分离子注入区域的两种类型的面内区域在与离子的扫描方向正交的方向上交替排列一次或多次 梁被创建。 在部分离子注入区域的创建期间，可以重复使用离子束的往复扫描，直到在可以固定半导体晶片的状态下执行或停止对半导体晶片的离子束辐射的同时满足目标剂量。 在全宽非离子注入区域的创建期间，可以移动半导体晶片而不对半导体晶片执行离子束辐射。 然后，通过重复半导体晶片的固定和移动多次，在半导体晶片的期望区域中产生离子注入区域和非离子注入区域。

公开(公告)号：US20140235042A1

公开(公告)日：2014-08-21

申请号：US14259889

申请日：2014-04-23

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Tetsuya Kudo ,  Akihiro Ochi

IPC: H01L21/265 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/542 ,  H01J37/3007 ,  H01J37/3023 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/30483

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract translation: 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额

公开(公告)号：US09165772B2

公开(公告)日：2015-10-20

申请号：US14259889

申请日：2014-04-23

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Tetsuya Kudo ,  Akihiro Ochi

IPC: H01L21/66 ,  G01R31/26 ,  H01L21/265 ,  C23C14/48 ,  C23C14/54 ,  H01J37/302 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/542 ,  H01J37/3007 ,  H01J37/3023 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/30483

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract translation: 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额

公开(公告)号：US08980654B2

公开(公告)日：2015-03-17

申请号：US13939908

申请日：2013-07-11

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Akihiro Ochi

IPC: H01L21/265 ,  H01J37/302 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30483

Abstract: The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.

Abstract translation: 离子注入方法包括使用混合扫描预先设置离子注入期间的物体的离子束扫描速度和机械扫描速度，并且基于设定的离子束扫描速度和所设定的物体的机械扫描速度来注入离子。 在预先设定的情况下，基于根据照射离子的物体的表面轮廓分别改变的离子束扫描振幅各自设定离子束扫描速度，使离子束扫描频率保持恒定， 离子束扫描幅度的任何一个以及对应于离子束扫描速度的物体的机械扫描速度被设定为使得要注入物体表面的每单位面积的离子注入剂量保持恒定。

公开(公告)号：US20130157390A1

公开(公告)日：2013-06-20

申请号：US13710174

申请日：2012-12-10

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Yasuharu Okamoto ,  Masaki Ishikawa ,  Takeshi Kurose ,  Akihiro Ochi

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30477 ,  H01J2237/30488

Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

Abstract translation: 离子注入方法包括将离子作为离子束输送到晶片，导致晶片经历晶片机械慢扫描，并且还使得离子束经历光束快速扫描或使得晶片在垂直于晶体的方向上进行晶片机械快速扫描 晶片缓慢的扫描方向，通过在晶片慢速扫描方向上使用晶片慢扫描和离子束的光束快速扫描或晶片在垂直于晶片的方向快速扫描缓慢扫描离子束照射晶片 扫描方向，在离子注入晶片之前测量离子束的二维束形状，并且通过使用测量的二维光束形状限定离子束的注入和照射区域，从而调节注入和照射区域。