公开(公告)号：US10290760B2

公开(公告)日：2019-05-14

申请号：US16017492

申请日：2018-06-25

Applicant: SensL Technologies Ltd.

Inventor： Kevin Michael O'Neill ,  John Carlton Jackson ,  Liam Wall

IPC: G11C11/36 ,  G11C11/34 ,  H01L31/107 ,  H01L31/0224 ,  H01L27/144 ,  H01L31/18 ,  H01L31/02

Abstract: In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween.

公开(公告)号：US11239382B2

公开(公告)日：2022-02-01

申请号：US16152596

申请日：2018-10-05

Applicant: SENSL TECHNOLOGIES LTD.

Inventor： Kevin O'Neill ,  Liam Wall ,  John Carlton Jackson

IPC: H01L31/00 ,  H01L31/107 ,  H01L31/0232 ,  H01L27/146

Abstract: A semiconductor photomultiplier includes a microcell, a photosensitive diode, and an anti-reflective coating. The microcell has an insulating layer formed over an active region. The photosensitive diode is formed in the active region beneath the insulating layer. The anti-reflective coating is provided on the insulating layer.

公开(公告)号：US20180309012A1

公开(公告)日：2018-10-25

申请号：US16017492

申请日：2018-06-25

Applicant: SensL Technologies Ltd.

Inventor： Kevin Michael O'Neill ,  John Carlton Jackson ,  Liam Wall

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L27/144

CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L31/022408 ,  H01L31/1804

Abstract: In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween.

公开(公告)号：US09437630B2

公开(公告)日：2016-09-06

申请号：US14283006

申请日：2014-05-20

Applicant: SensL Technologies Ltd.

Inventor： Liam Wall ,  Kevin O'Neill ,  John Carlton Jackson

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/115

CPC classification number: H01L27/1446 ,  H01L31/107 ,  H01L31/115

Abstract: The present disclosure relates to photon detectors. In particular, the present disclosure relates to high sensitivity photon detectors such as semiconductor photomultipliers. A semiconductor photomultiplier is described which comprises an array of interconnected photosensitive microcells; and at least one dark count rate (DCR) suppression element associated with the array.

Abstract translation: 本公开涉及光子检测器。 特别地，本发明涉及诸如半导体光电倍增管的高灵敏度光子检测器。 描述了一种半导体光电倍增管，其包括互连的光敏微电池阵列; 以及与阵列相关联的至少一个暗计数率（DCR）抑制元件。

公开(公告)号：US10302778B2

公开(公告)日：2019-05-28

申请号：US15935520

申请日：2018-03-26

Applicant: SensL Technologies Ltd.

Inventor： Kevin O'Neill ,  Liam Wall ,  John Carlton Jackson

IPC: G01T1/24 ,  H01L27/144 ,  H01L49/02 ,  G01T3/08 ,  G01T1/20 ,  G01T1/208

Abstract: A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads; a first node of each output load is common to one of the photosensitive elements and the corresponding quench element; and a third electrode provides an output signal from the photosensitive elements; the third electrode is coupled to a second node of the respective output loads; the outputs loads fully or partially correct an overshoot of the output signal on the third electrode.

公开(公告)号：US10121928B2

公开(公告)日：2018-11-06

申请号：US14321487

申请日：2014-07-01

Applicant: SensL Technologies Ltd.

Inventor： Kevin O'Neill ,  Liam Wall ,  John Carlton Jackson

IPC: H01L27/00 ,  H01L31/107 ,  H01L31/0232 ,  H01L27/146

Abstract: The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process.

公开(公告)号：US10043936B1

公开(公告)日：2018-08-07

申请号：US15336368

申请日：2016-10-27

Applicant: SensL Technologies Ltd.

Inventor： Kevin Michael O'Neill ,  John Carlton Jackson ,  Liam Wall

IPC: G11C11/34 ,  G11C11/36 ,  H01L31/107 ,  H01L31/0224 ,  H01L31/028 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/18

Abstract: The present disclosure relates to an avalanche photodiode comprising a substrate having an active area. A first dopant implant in the active area forms one of an anode and the cathode of the avalanche photodiode. A second dopant implant in the active area forming the other one of the anode and the cathode of the avalanche photodiode, wherein at least one of the first and second dopant implants defines a discontinuous formation having at least one interruption.

公开(公告)号：US09939536B2

公开(公告)日：2018-04-10

申请号：US15048547

申请日：2016-02-19

Applicant: SensL Technologies Ltd.

Inventor： Kevin O'Neill ,  Liam Wall ,  John Carlton Jackson

IPC: G01T1/24 ,  H01L27/144 ,  H01L49/02 ,  G01T3/08 ,  G01T1/20 ,  G01T1/208

CPC classification number: G01T1/248 ,  G01T1/2018 ,  G01T1/208 ,  G01T1/247 ,  G01T3/08 ,  H01L27/1443 ,  H01L28/20

Abstract: A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads each having a capacitive load operably coupled to a resisitive load in a parallel configuration between first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench element; and a third electrode coupled to the second nodes of the output loads to provide an output signal from the photosensitive elements. The outputs loads fully or partially correct an overshoot of an output signal on the third electrode.

公开(公告)号：US20170242136A1

公开(公告)日：2017-08-24

申请号：US15048547

申请日：2016-02-19

Applicant: SensL Technologies Ltd.

Inventor： Kevin O'Neill ,  Liam Wall ,  John Carlton Jackson

IPC: G01T1/24 ,  G01T3/08 ,  H01L31/18 ,  H01L49/02 ,  H01L27/144 ,  H01L31/115

CPC classification number: G01T1/248 ,  G01T1/2018 ,  G01T1/208 ,  G01T1/247 ,  G01T3/08 ,  H01L27/1443 ,  H01L28/20

Abstract: A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads each having a capacitive load operably coupled to a resisitive load in a parallel configuration between first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench element; and a third electrode coupled to the second nodes of the output loads to provide an output signal from the photosensitive elements. The outputs loads fully or partially correct an overshoot of an output signal on the third electrode.

公开(公告)号：US20160005913A1

公开(公告)日：2016-01-07

申请号：US14321487

申请日：2014-07-01

Applicant: SensL Technologies Ltd.

Inventor： Kevin O'Neill ,  Liam Wall ,  John Carlton Jackson

IPC: H01L31/18 ,  H01L31/115 ,  H01L31/107 ,  H01L31/0232

CPC classification number: H01L31/107 ,  H01L27/1462 ,  H01L27/14685 ,  H01L31/02327

Abstract: The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process.

Abstract translation: 本公开涉及制造光电倍增管微电池的方法。 该方法包括在有源区上提供绝缘层; 以及通过所述绝缘层注入掺杂剂以在所述有源区中形成感光二极管。 一旦形成的绝缘层在整个制造过程中被保留在活性区域上。