公开(公告)号：US20140138729A1

公开(公告)日：2014-05-22

申请号：US14085092

申请日：2013-11-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Da Hye KIM ,  Jong Kyun You ,  Chang Yeon Kim ,  Tae Hyuk Im

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0025

Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.

Abstract translation: 根据本发明的示例性实施例的制造方法的发光二极管的方法包括在第一衬底上形成第一导电类型半导体层，有源层和第二导电类型半导体层，形成第二衬底 所述第二导电型半导体层将所述第一基板与所述第一导电型半导体层分离，在分离所述基板之后在所述第一导电型半导体层上形成包括多个开口的掩模图案，蚀刻所述第一导电型 具有设置在其上的掩模图案的半导体层，以形成彼此分离的多个凹槽，去除掩模图案，以及蚀刻第一导电型半导体层的表面以形成亚微观纹理。

公开(公告)号：US20170279008A1

公开(公告)日：2017-09-28

申请号：US15503963

申请日：2015-08-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Kyun YOU ,  Da Hye KIM ,  Chang Ik KIM

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A light emitting diode includes a support substrate; a light emitting structure including a second semiconductor layer, an active layer, and a first semiconductor layer; at least one groove formed on the lower surface of the light emitting structure; a second electrode located on at least the lower surface of the second semiconductor layer, and electrically connected with the second semiconductor layer; an insulating layer partially covering the second electrode and the lower surface of the light emitting structure, and including at least one opening corresponding to the at least one groove; and a first electrode electrically connected to the first semiconductor layer exposed to the at least one groove, and at least partially covering the insulating layer, wherein the second electrode includes a second contact layer including an ohmic contact layer, and the ohmic contact layer is disposed in the shape of a plurality of islands.