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公开(公告)号：US09508909B2
公开(公告)日：2016-11-29
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L27/15 , H01L33/60 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/44 , H01L33/06 , H01L33/00
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括接触n型化合物半导体层的Ni层和设置在Ni层上的两个Au层。
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公开(公告)号：US20160111613A1
公开(公告)日：2016-04-21
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括与n型化合物半导体层接触的Ni层和设置在Ni层上的2层Au层。
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公开(公告)号：US09236533B2
公开(公告)日：2016-01-12
申请号：US14368268
申请日：2012-12-21
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.
Abstract translation: 公开了一种发光二极管及其制造方法。 根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。 光散射图可以提高光提取效率。
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4.发明申请LIGHT-EMITTING DIODE DRIVING DEVICE, DRIVING METHOD AND LIGHT-EMITTING DIODE LIGHTING MODULE COMPRISING THE SAME 有权发光二极管驱动装置，驱动方法和包含其的发光二极管照明模块公开(公告)号：US20150317930A1
公开(公告)日：2015-11-05
申请号：US14715341
申请日：2015-05-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Yeon Kim , Tae Hyuk Im , Young Wug Kim
IPC: G09G3/32
CPC classification number: G09G3/32 , H05B33/0815 , Y02B20/346
Abstract: A light-emitting diode driving device enabling an excellent heat-dissipation function and high-efficient driving is disclosed. The disclosed LED driving device comprises: a power source unit providing an alternate current voltage; a rectification unit communicatively coupled to the power source and rectifying the alternate current voltage; a driving signal generation unit configured to receive the rectified voltage from the rectification unit and generate a primary driving signal by using the rectified voltage; and an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation unit configured to receive the primary driving signal and generating a secondary pulse driving signal by modulating the primary driving signal, and LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal.
Abstract translation: 公开了一种能够实现优异的散热功能和高效率驱动的发光二极管驱动装置。 所公开的LED驱动装置包括：提供交流电压的电源单元; 整流单元，其通信地耦合到电源并整流交流电压; 驱动信号生成单元，被配置为从整流单元接收整流电压，并通过使用整流电压产生主驱动信号; 以及LED驱动信号调制单元，其通信地耦合到所述驱动信号发生器，所述LED驱动信号调制单元被配置为接收所述主驱动信号并且通过调制所述主驱动信号产生次脉冲驱动信号，以及LED组包括LED并且被配置为 接收主要驱动信号或第二脉冲驱动信号，使得LED组响应于主驱动信号或辅助脉冲驱动信号而工作。
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公开(公告)号：US09306120B2
公开(公告)日：2016-04-05
申请号：US14085092
申请日：2013-11-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Da Hye Kim , Jong Kyun You , Chang Yeon Kim , Tae Hyuk Im
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0025
Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
Abstract translation: 根据本发明的示例性实施例的制造方法的发光二极管的方法包括在第一衬底上形成第一导电类型半导体层，有源层和第二导电类型半导体层，形成第二衬底 所述第二导电型半导体层将所述第一基板与所述第一导电型半导体层分离，在分离所述基板之后在所述第一导电型半导体层上形成包括多个开口的掩模图案，蚀刻所述第一导电型 具有设置在其上的掩模图案的半导体层以形成彼此分离的多个凹槽，去除掩模图案，以及蚀刻第一导电型半导体层的表面以形成亚微观纹理。
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Patent Agency Ranking
公开(公告)号：US20140138729A1
公开(公告)日：2014-05-22
申请号：US14085092
申请日：2013-11-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Da Hye KIM , Jong Kyun You , Chang Yeon Kim , Tae Hyuk Im
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0025
Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
Abstract translation: 根据本发明的示例性实施例的制造方法的发光二极管的方法包括在第一衬底上形成第一导电类型半导体层，有源层和第二导电类型半导体层，形成第二衬底 所述第二导电型半导体层将所述第一基板与所述第一导电型半导体层分离，在分离所述基板之后在所述第一导电型半导体层上形成包括多个开口的掩模图案，蚀刻所述第一导电型 具有设置在其上的掩模图案的半导体层，以形成彼此分离的多个凹槽，去除掩模图案，以及蚀刻第一导电型半导体层的表面以形成亚微观纹理。
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公开(公告)号：US09653018B2
公开(公告)日：2017-05-16
申请号：US14715341
申请日：2015-05-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Yeon Kim , Tae Hyuk Im , Young Wug Kim
CPC classification number: G09G3/32 , H05B33/0815 , Y02B20/346
Abstract: A light-emitting diode driving device enabling an excellent heat-dissipation function and high-efficient driving is disclosed. The disclosed LED driving device comprises: a power source unit providing an alternate current voltage; a rectification unit communicatively coupled to the power source and rectifying the alternate current voltage; a driving signal generation unit configured to receive the rectified voltage from the rectification unit and generate a primary driving signal by using the rectified voltage; and an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation unit configured to receive the primary driving signal and generating a secondary pulse driving signal by modulating the primary driving signal, and LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal.
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公开(公告)号：US09202968B2
公开(公告)日：2015-12-01
申请号：US14083856
申请日：2013-11-19
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Yeon Kim , Tae Kyoon Kim , Tae Hyuk Im
CPC classification number: H01L33/0079
Abstract: Provided is a method of fabricating a vertical light emitting diode (LED). Initially, a semiconductor structure layer including an active layer is formed on a front surface of a growth substrate. A conductive support substrate is formed on the semiconductor structure layer. A rear surface of the growth substrate is abraded to reduce the thickness of the growth substrate. The rear surface of the growth substrate whose thickness is reduced due to the abrasion is dry etched to remove the growth substrate.
Abstract translation: 提供一种制造垂直发光二极管（LED）的方法。 首先，在生长衬底的前表面上形成包括有源层的半导体结构层。 在半导体结构层上形成导电支撑基板。 研磨生长衬底的后表面以减小生长衬底的厚度。 干燥蚀刻由于磨损而使厚度减小的生长衬底的后表面以除去生长衬底。
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公开(公告)号：US20140367722A1
公开(公告)日：2014-12-18
申请号：US14368268
申请日：2012-12-21
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.
Abstract translation: 公开了一种发光二极管及其制造方法。 根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。 光散射图可以提高光提取效率。
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公开(公告)号：US09991424B2
公开(公告)日：2018-06-05
申请号：US15355219
申请日：2016-11-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L31/12 , H01L33/44 , H01L33/22 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/06 , H01L33/60 , H01L33/40
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
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