公开(公告)号：US20190165208A1

公开(公告)日：2019-05-30

申请号：US16264866

申请日：2019-02-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ji Hye KIM ,  Kyoung Wan KIM ,  Ye Seul KIM

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/62 ,  H01L33/20 ,  H01L33/46 ,  H01L33/38

Abstract: A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.

公开(公告)号：US20190123244A1

公开(公告)日：2019-04-25

申请号：US16218042

申请日：2018-12-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan KIM ,  Sang Hyun OH ,  Duk Il SUH ,  Sang Won WOO ,  Ji Hye KIM

IPC: H01L33/44 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/06

Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.

公开(公告)号：US20170108937A1

公开(公告)日：2017-04-20

申请号：US15279549

申请日：2016-09-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan KIM ,  Sang Won WOO ,  Ji Hye KIM

IPC: G06F3/02 ,  H01H13/83 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46

CPC classification number: G06F3/0202 ,  G06F1/1662 ,  H01H13/83 ,  H01H2219/036 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46

Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.