公开(公告)号：US10522716B2

公开(公告)日：2019-12-31

申请号：US15917445

申请日：2018-03-09

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seung Chul Park ,  Woo Chul Gwak ,  Jun Ho Yun

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L33/22 ,  H01L33/02

Abstract: Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.

公开(公告)号：US20180261724A1

公开(公告)日：2018-09-13

申请号：US15917445

申请日：2018-03-09

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seung Chul Park ,  Woo Chul Gwak ,  Jun Ho Yun

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/14

CPC classification number: H01L33/24 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32

Abstract: Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.