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公开(公告)号：US20180261724A1
公开(公告)日：2018-09-13
申请号：US15917445
申请日：2018-03-09
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seung Chul Park , Woo Chul Gwak , Jun Ho Yun
CPC classification number: H01L33/24 , H01L33/0075 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32
Abstract: Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.
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公开(公告)号：US20160104816A1
公开(公告)日：2016-04-14
申请号：US14893466
申请日：2014-04-08
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Sung Ho An , Chang Suk Han , Jun Ho Yun , Chae Hon Kim , Si Hoon Lyu
Abstract: Provided are a light-emitting element and a method for preparing same. The method includes a method for growing a p-type semiconductor layer having a low-concentration doping layer, an undoped layer and a high-concentration doping layer. During the growth of the low-concentration doping layer and the high-concentration doping layer, both N2 gas and H2 gas are supplied, whereas, during the growth of the undoped layer, the supply of H2 gas is shut off and N2 gas is supplied. Accordingly, the doping concentration of Mg contained in the undoped layer can be further lowered, and thus, hole mobility within the p-type semiconductor layer can be enhanced.
Abstract translation: 提供发光元件及其制备方法。 该方法包括用于生长具有低浓度掺杂层，未掺杂层和高浓度掺杂层的p型半导体层的方法。 在低浓度掺杂层和高浓度掺杂层的生长期间，供应N 2气体和H 2气体，而在未掺杂层生长期间，关闭H 2气体的供应并提供N 2气体 。 因此，可以进一步降低包含在未掺杂层中的Mg的掺杂浓度，从而可以提高p型半导体层内的空穴迁移率。
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公开(公告)号：US20180212102A1
公开(公告)日：2018-07-26
申请号：US15934589
申请日：2018-03-23
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Keum Ju Lee , Seom Geun Lee , Jun Ho Yun , Woo Chul Gwak , Sam Seok Jang
CPC classification number: H01L33/24 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/42 , H01L33/54 , H01L33/62 , H01L2224/04042 , H01L2224/05012 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/1815 , H01L2924/00014
Abstract: A light emitting element comprises: a substrate including protrusions; and a light emitting structure located on the substrate. The protrusions are disposed in a honeycomb pattern and include a first protrusion and second to seventh protrusions which are adjacent to the first protrusion and spaced equidistant from the first protrusions. The angle between a first vector line extending in a direction from the center of the first protrusion toward the center of the second protrusion and a second vector line extending in a direction from the center of the first protrusion to the center of the fourth projection is 120° , the angle between the second vector line and the third vector line extending in a direction from the center of the first projection to the center of the sixth protrusion is 120.
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公开(公告)号：US10522716B2
公开(公告)日：2019-12-31
申请号：US15917445
申请日：2018-03-09
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seung Chul Park , Woo Chul Gwak , Jun Ho Yun
Abstract: Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.
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