公开(公告)号：US12136610B2

公开(公告)日：2024-11-05

申请号：US17526306

申请日：2021-11-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Namgoo Cha ,  Sang Min Kim ,  Seongchan Park ,  Yeonkyu Park ,  Jae Hee Lim

IPC: H01L25/075 ,  H01L33/10 ,  H01L33/46 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62

Abstract: A unit pixel and a displaying apparatus including the unit pixel are provided. The unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, a light blocking layer disposed between the transparent substrate and the light emitting devices, and having at least one window, and a semi-transmissive layer disposed between at least one of the plurality of light emitting devices and the transparent substrate to overlap with the window at least partially.

公开(公告)号：US12027654B2

公开(公告)日：2024-07-02

申请号：US17470421

申请日：2021-09-09

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Namgoo Cha ,  Sangmin Kim ,  Yeonkyu Park

IPC: H01L33/60 ,  H01L25/075 ,  H01L33/10 ,  H01L33/62

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/10 ,  H01L33/62

Abstract: A unit pixel includes a transparent substrate having an upper surface and a lower surface, a plurality of light emitting devices arranged over the upper surface of the transparent substrate, and a reflector disposed between the light emitting devices and the transparent substrate. Light emitted from the light emitting devices is configured to exit to the outside through the upper and lower surfaces of the transparent substrate, and the reflector is configured to reflect light proceeding to the upper surface of the transparent substrate from the inside of the transparent substrate.

公开(公告)号：US12272765B2

公开(公告)日：2025-04-08

申请号：US17473548

申请日：2021-09-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Namgoo Cha ,  Sangmin Kim ,  Yeonkyu Park

IPC: H01L33/10 ,  H01L25/075 ,  H01L33/40 ,  H01L33/60 ,  H01L33/62

Abstract: A light emitting device is a micro-scale light emitting device including a semiconductor stack, an insulation layer, and a metal reflection layer. The semiconductor stack includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The insulation layer covers upper and side surfaces of the semiconductor stack. The metal reflection layer is disposed on the insulation layer, and covers at least a portion of the side surface of the semiconductor stack. The insulation layer includes a distributed Bragg reflector.

公开(公告)号：US11949055B2

公开(公告)日：2024-04-02

申请号：US17322129

申请日：2021-05-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Namgoo Cha ,  Sang Min Kim ,  Seongchan Park ,  Yeonkyu Park ,  Jae Hee Lim ,  Jinkyu Jang

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L33/22 ,  H01L33/46 ,  H01L33/54 ,  H01L33/58

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/22 ,  H01L33/46 ,  H01L33/54 ,  H01L33/58

Abstract: A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, connection layers electrically connected to the light emitting devices, and bonding pads disposed over the connection layers and electrically connected to the connection layers. The bonding pads are partially overlapped with at least one of the light emitting devices in a vertical direction, respectively.