公开(公告)号：US20160254303A1

公开(公告)日：2016-09-01

申请号：US15026724

申请日：2014-09-16

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Takahiro TAKIMOTO ,  Kazuhiro NATSUAKI ,  Masayo UCHIDA ,  Nobuyoshi AWAYA ,  Kazuya ISHIHARA ,  Takashi NAKANO ,  Mitsuru NAKURA

IPC: H01L27/146 ,  G02B5/20

CPC classification number: H01L27/14621 ,  G01J3/0259 ,  G01J3/513 ,  G02B5/008 ,  G02B5/20 ,  G02B5/204 ,  H01L31/02327

Abstract: A photoelectric conversion device includes: a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a first photoelectric conversion element with an insulating film therebetween; and a first optical filter that has a second pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a second photoelectric conversion element with the insulating film therebetween. The interval between the first pattern and the second pattern that are adjacent to each other is longer than a period of the structures in the first pattern and a period of the structures in the second pattern.

Abstract translation: 光电转换装置包括：第一滤光器，其具有周期性地具有多个结构的第一图案，并且由设置在第一光电转换元件上的导电材料膜形成，其间具有绝缘膜; 以及具有周期性地具有多个结构的第二图案的第一滤光器，并且由设置在第二光电转换元件上的导电材料膜形成，其间具有绝缘膜。 彼此相邻的第一图案和第二图案之间的间隔比第一图案中的结构的周期和第二图案中的结构的周期长。

公开(公告)号：US20160064436A1

公开(公告)日：2016-03-03

申请号：US14779221

申请日：2014-02-27

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Masayo UCHIDA ,  Kazuhiro NATSUAKI ,  Takahiro TAKIMOTO ,  Nobuyoshi AWAYA ,  Kazuya ISHIHARA ,  Takashi NAKANO

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14685 ,  H01L31/02162

Abstract: A circuit-integrated photoelectric converter in which a dished portion is less likely to be formed in an insulating layer underlying a plasmonic filter portion and the plasmonic filter portion can be accurately and finely processed is provided and a method for manufacturing the same is provided. A metal layer (31) is disposed on an insulating layer (7) above a wiring layer (11, 12, 13). This metal layer (31) includes a plasmonic filter portion (32) and a shield metal portion (33) that blocks light. The plasmonic filter portion (32) having cyclic holes (32a) to guide light having a selected wavelength to a first photoelectric converting element (101).

Abstract translation: 提供了其中在等离子体激元滤波器部分等离子体激元滤波器部分和等离子体激元滤波器部分之下的绝缘层中不太可能形成碟形部分的电路集成光电转换器，并且提供了其制造方法。 金属层（31）设置在布线层（11,12,13）上方的绝缘层（7）上。 该金属层（31）包括阻挡光的等离子体激元过滤部（32）和屏蔽金属部（33）。 等离子体激元过滤器部分（32）具有用于将具有选定波长的光引导到第一光电转换元件（101）的循环孔（32a）。

公开(公告)号：US20130248809A1

公开(公告)日：2013-09-26

申请号：US13848926

申请日：2013-03-22

Applicant: SHARP KABUSHIKI KAISHA ,  ELPIDA MEMORY, INC.

Inventor： Yukio TAMAI ,  Takashi NAKANO ,  Nobuyoshi AWAYA ,  Kazuo AIZAWA ,  Isamu ASANO ,  Naoya HIGANO ,  Tsuyoshi KAWAGOE

IPC: H01L45/00

CPC classification number: H01L45/126 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

Abstract: As for a variable resistive element including first and second electrodes, and a variable resistor containing a metal oxide between the first and second electrodes, in a case where a current path having a locally high current density of a current flowing between the both electrodes is formed in the metal oxide, and resistivity of at least one specific electrode having higher resistivity of the both electrodes is 100 μΩcm or more, a dimension of a contact region of the specific electrode with the variable resistor in a short side or short axis direction is set to be more than 1.4 times as long as a film thickness of the specific electrode, which reduces variation in parasitic resistance generated in an electrode part due to process variation of the electrode, and prevents variation in resistance change characteristics of the variable resistive element generated due to the variation in parasitic resistance.

Abstract translation: 对于包含第一和第二电极的可变电阻元件和在第一和第二电极之间包含金属氧化物的可变电阻器，在形成具有在两个电极之间流动的电流的局部高电流密度的电流路径的情况下 在金属氧化物中，具有两个电极的电阻率较高的至少一个特定电极的电阻率为100微米或更大，特定电极与可变电阻器在短边或短轴方向上的接触区域的尺寸被设定 为特定电极的膜厚的1.4倍以上，由于电极的工艺变化，电极部分产生的寄生电阻的变化减小，并且防止由于电极产生的可变电阻元件的电阻变化特性的变化 对寄生电阻的变化。

公开(公告)号：US20160211388A1

公开(公告)日：2016-07-21

申请号：US14913443

申请日：2014-07-11

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Kazuhiro NATSUAKI ,  Masayo UCHIDA ,  Takahiro TAKIMOTO ,  Nobuyoshi AWAYA ,  Kazuya ISHIHARA ,  Takashi NAKANO ,  Mitsuru NAKURA

IPC: H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/02162 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14645 ,  H01L31/02164

Abstract: A photoelectric conversion device capable of preventing anomalous transmission of light of a wavelength that is not supposed to be transmitted and reducing the half-width of a spectral waveform and a method for manufacturing such a photoelectric conversion device are provided. A first photoelectric conversion element is formed on a substrate. A first metal film having a plurality of openings arranged periodically or aperiodically is formed above the first photoelectric conversion element with insulating films interposed therebetween. A second metal film covering a part of the openings in the first metal film is provided.

Abstract translation: 提供一种能够防止不被发送的波长的光的异常透射并且减小光谱波形的半值的光电转换装置以及制造这种光电转换装置的方法。 在基板上形成第一光电转换元件。 在第一光电转换元件的上方形成具有周期性或非周期性排列的多个开口的第一金属膜，其间具有绝缘膜。 提供了覆盖第一金属膜中的一部分开口的第二金属膜。

公开(公告)号：US20150036217A1

公开(公告)日：2015-02-05

申请号：US14307626

申请日：2014-06-18

Applicant: Sharp Kabushiki Kaisha

Inventor： Takashi NAKANO ,  Mitsuru NAKURA ,  Kazuya ISHIHARA ,  Nobuyoshi AWAYA ,  Kazuhiro NATSUAKI ,  Takahiro TAKIMOTO ,  Masayo UCHIDA

IPC: G02B5/20 ,  G02B5/00

CPC classification number: G02B5/203 ,  G02B5/008 ,  G02B5/204

Abstract: An optical filter configured to transmit light of a predetermined wavelength includes a substrate; a first conductive thin film that is disposed on the substrate and has apertures extending through the first conductive thin film and arranged with a period of less than the predetermined wavelength; and a second conductive thin film at least a portion of which faces the apertures so as to be separated from the apertures.

Abstract translation: 配置为透射预定波长的光的滤光器包括：基板; 第一导电薄膜，其设置在所述基板上并且具有延伸穿过所述第一导电薄膜并且以小于所述预定波长的周期布置的孔; 以及第二导电薄膜，其至少一部分面向所述孔以便与所述孔分离。

公开(公告)号：US20130088911A1

公开(公告)日：2013-04-11

申请号：US13647573

申请日：2012-10-09

Applicant: SHARP KABUSHIKI KAISHA ,  ELPIDA MEMORY, INC.

Inventor： Mitsuru NAKURA ,  Nobuyoshi AWAYA ,  Kazuya ISHIHARA ,  Akiyoshi SEKO

IPC: G11C11/00

CPC classification number: G11C13/0028 ,  G11C13/0002 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0078 ,  G11C2213/79

Abstract: A semiconductor memory device includes a writing circuit and a reading circuit. The writing circuit executes a setting action for converting a resistance of a variable resistance element to a low resistance by applying current from one end side to the other end side of a memory cell via the variable resistance element, and a resetting action for converting the resistance to a high resistance by applying current from the other end side to the one end side via the variable resistance element. The reading circuit executes a first reading action for reading a resistance state of the variable resistance element by applying current from one end side to the other end side of the memory cell via the variable resistance element, and a second reading action for reading the resistance state by applying current from the other end side to the one end side via the variable resistance element.

Abstract translation: 半导体存储器件包括写入电路和读取电路。 写入电路通过经由可变电阻元件施加从存储单元的一端到另一端侧的电流来执行用于将可变电阻元件的电阻转换为低电阻的设定动作，以及用于转换电阻的复位动作 通过经由可变电阻元件从另一端侧向一端侧施加电流而产生高电阻。 读取电路通过经由可变电阻元件施加电流从存储单元的一端到另一端进行电流来读出可变电阻元件的电阻状态的第一读取动作，以及读取电阻状态的第二读取动作 通过经由可变电阻元件从另一端侧向一端侧施加电流。