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    VARIABLE RESISTIVE ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    2.
    发明申请
    VARIABLE RESISTIVE ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
    可变电阻元件和非易失性半导体存储器件

    公开(公告)号：US20130248809A1

    公开(公告)日：2013-09-26

    申请号：US13848926

    申请日：2013-03-22

    Applicant: SHARP KABUSHIKI KAISHA ,  ELPIDA MEMORY, INC.

    Inventor： Yukio TAMAI ,  Takashi NAKANO ,  Nobuyoshi AWAYA ,  Kazuo AIZAWA ,  Isamu ASANO ,  Naoya HIGANO ,  Tsuyoshi KAWAGOE

    IPC: H01L45/00

    CPC classification number: H01L45/126 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

    Abstract: As for a variable resistive element including first and second electrodes, and a variable resistor containing a metal oxide between the first and second electrodes, in a case where a current path having a locally high current density of a current flowing between the both electrodes is formed in the metal oxide, and resistivity of at least one specific electrode having higher resistivity of the both electrodes is 100 μΩcm or more, a dimension of a contact region of the specific electrode with the variable resistor in a short side or short axis direction is set to be more than 1.4 times as long as a film thickness of the specific electrode, which reduces variation in parasitic resistance generated in an electrode part due to process variation of the electrode, and prevents variation in resistance change characteristics of the variable resistive element generated due to the variation in parasitic resistance.

    Abstract translation: 对于包含第一和第二电极的可变电阻元件和在第一和第二电极之间包含金属氧化物的可变电阻器，在形成具有在两个电极之间流动的电流的局部高电流密度的电流路径的情况下 在金属氧化物中，具有两个电极的电阻率较高的至少一个特定电极的电阻率为100微米或更大，特定电极与可变电阻器在短边或短轴方向上的接触区域的尺寸被设定 为特定电极的膜厚的1.4倍以上，由于电极的工艺变化，电极部分产生的寄生电阻的变化减小，并且防止由于电极产生的可变电阻元件的电阻变化特性的变化 对寄生电阻的变化。

    MATURITY DETERMINATION DEVICE AND MATURITY DETERMINATION METHOD
    3.
    发明申请
    MATURITY DETERMINATION DEVICE AND MATURITY DETERMINATION METHOD 审中-公开

    公开(公告)号：US20190244338A1

    公开(公告)日：2019-08-08

    申请号：US16379843

    申请日：2019-04-10

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Rieko OGAWA ,  Takashi NAKANO ,  Mitsuru NAKURA ,  Daiichiro NAKASHIMA

    IPC: G06T7/00

    CPC classification number: G06T7/001 ,  A01D46/30 ,  A01D75/00 ,  A01D91/04 ,  G06T7/0012 ,  G06T2207/10024 ,  G06T2207/10048 ,  G06T2207/30004 ,  G06T2207/30128

    Abstract: A maturity determination device includes an image capturing device including a plurality of pixels arrayed one-dimensionally or two-dimensionally, the image capturing device performing image capturing of at least a part of a fruit or vegetable product to acquire an image, the plurality of pixels including a plurality of first pixels each including a first light transmission filter selectively transmitting light of a first wavelength band, the intensity of the light of the first wavelength band reflected by the fruit or vegetable product varying in accordance with a maturity level; and a signal processing circuit configured to find an area size ratio of an intensity distribution of the light of the first wavelength band on the basis of a predetermined reference value based on a pixel value obtained from the plurality of first pixels, and to generate maturity determination information in accordance with the area size ratio.

    PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING SAME
    4.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    光电转换装置及其制造方法

    公开(公告)号：US20160211388A1

    公开(公告)日：2016-07-21

    申请号：US14913443

    申请日：2014-07-11

    Applicant: SHARP KABUSHIKI KAISHA

    Inventor： Kazuhiro NATSUAKI ,  Masayo UCHIDA ,  Takahiro TAKIMOTO ,  Nobuyoshi AWAYA ,  Kazuya ISHIHARA ,  Takashi NAKANO ,  Mitsuru NAKURA

    IPC: H01L31/0216 ,  H01L27/146

    CPC classification number: H01L31/02162 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14645 ,  H01L31/02164

    Abstract: A photoelectric conversion device capable of preventing anomalous transmission of light of a wavelength that is not supposed to be transmitted and reducing the half-width of a spectral waveform and a method for manufacturing such a photoelectric conversion device are provided. A first photoelectric conversion element is formed on a substrate. A first metal film having a plurality of openings arranged periodically or aperiodically is formed above the first photoelectric conversion element with insulating films interposed therebetween. A second metal film covering a part of the openings in the first metal film is provided.

    Abstract translation: 提供一种能够防止不被发送的波长的光的异常透射并且减小光谱波形的半值的光电转换装置以及制造这种光电转换装置的方法。 在基板上形成第一光电转换元件。 在第一光电转换元件的上方形成具有周期性或非周期性排列的多个开口的第一金属膜，其间具有绝缘膜。 提供了覆盖第一金属膜中的一部分开口的第二金属膜。

    OPTICAL FILTER
    5.
    发明申请
    OPTICAL FILTER 有权
    光学过滤器

    公开(公告)号：US20150036217A1

    公开(公告)日：2015-02-05

    申请号：US14307626

    申请日：2014-06-18

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Takashi NAKANO ,  Mitsuru NAKURA ,  Kazuya ISHIHARA ,  Nobuyoshi AWAYA ,  Kazuhiro NATSUAKI ,  Takahiro TAKIMOTO ,  Masayo UCHIDA

    IPC: G02B5/20 ,  G02B5/00

    CPC classification number: G02B5/203 ,  G02B5/008 ,  G02B5/204

    Abstract: An optical filter configured to transmit light of a predetermined wavelength includes a substrate; a first conductive thin film that is disposed on the substrate and has apertures extending through the first conductive thin film and arranged with a period of less than the predetermined wavelength; and a second conductive thin film at least a portion of which faces the apertures so as to be separated from the apertures.

    Abstract translation: 配置为透射预定波长的光的滤光器包括：基板; 第一导电薄膜，其设置在所述基板上并且具有延伸穿过所述第一导电薄膜并且以小于所述预定波长的周期布置的孔; 以及第二导电薄膜，其至少一部分面向所述孔以便与所述孔分离。

    PHOTOELECTRIC CONVERSION DEVICE
    7.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 审中-公开
    光电转换器件

    公开(公告)号：US20160254303A1

    公开(公告)日：2016-09-01

    申请号：US15026724

    申请日：2014-09-16

    Applicant: SHARP KABUSHIKI KAISHA

    Inventor： Takahiro TAKIMOTO ,  Kazuhiro NATSUAKI ,  Masayo UCHIDA ,  Nobuyoshi AWAYA ,  Kazuya ISHIHARA ,  Takashi NAKANO ,  Mitsuru NAKURA

    IPC: H01L27/146 ,  G02B5/20

    CPC classification number: H01L27/14621 ,  G01J3/0259 ,  G01J3/513 ,  G02B5/008 ,  G02B5/20 ,  G02B5/204 ,  H01L31/02327

    Abstract: A photoelectric conversion device includes: a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a first photoelectric conversion element with an insulating film therebetween; and a first optical filter that has a second pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a second photoelectric conversion element with the insulating film therebetween. The interval between the first pattern and the second pattern that are adjacent to each other is longer than a period of the structures in the first pattern and a period of the structures in the second pattern.

    Abstract translation: 光电转换装置包括：第一滤光器，其具有周期性地具有多个结构的第一图案，并且由设置在第一光电转换元件上的导电材料膜形成，其间具有绝缘膜; 以及具有周期性地具有多个结构的第二图案的第一滤光器，并且由设置在第二光电转换元件上的导电材料膜形成，其间具有绝缘膜。 彼此相邻的第一图案和第二图案之间的间隔比第一图案中的结构的周期和第二图案中的结构的周期长。

    SEMICONDUCTOR STORAGE DEVICE
    8.
    发明申请
    SEMICONDUCTOR STORAGE DEVICE 审中-公开
    半导体存储设备

    公开(公告)号：US20140085964A1

    公开(公告)日：2014-03-27

    申请号：US14028942

    申请日：2013-09-17

    Applicant: ELPIDA MEMORY, INC. ,  SHARP KABUSHIKI KAISHA

    Inventor： Takashi NAKANO ,  Yukiko TAMAI ,  Kenji MAE

    IPC: G11C13/00

    CPC classification number: G11C13/004 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79

    Abstract: A control circuit controls memory operations such that, in a first rewriting operation in which a resistance state of a variable resistance element is changed from a first state to a second state, a first voltage pulse is applied to both terminals of a memory cell while limiting the amount of current flowing through the variable resistance element to a value smaller than or equal to a certain small amount of current, in a second rewriting operation in which the resistance state of the variable resistance element is changed from the second state to the first state, a second voltage pulse is applied to both terminals of the memory cell, and, in a reading operation in which the resistance state stored in the variable resistance element is read, a third voltage pulse is applied to both terminals of the memory cell.

    Abstract translation: 控制电路控制存储器操作，使得在可变电阻元件的电阻状态从第一状态变为第二状态的第一重写操作中，将第一电压脉冲施加到存储单元的两个端子，同时限制 在可变电阻元件的电阻状态从第二状态变为第一状态的第二重写操作中，流过可变电阻元件的电流量小于或等于一定量的电流值 在存储单元的两端施加第二电压脉冲，在读取存储在可变电阻元件中的电阻状态的读取动作中，向存储单元的两端施加第三电压脉冲。

    IMAGE PICKUP APPARATUS AND IMAGE PROCESSING APPARATUS
    9.
    发明申请
    IMAGE PICKUP APPARATUS AND IMAGE PROCESSING APPARATUS 有权

    公开(公告)号：US20210165144A1

    公开(公告)日：2021-06-03

    申请号：US16061668

    申请日：2017-10-26

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Shinobu YAMAZAKI ,  Takashi NAKANO ,  Yukio TAMAI ,  Daisuke HONDA

    IPC: G02B5/20 ,  H04N5/33 ,  G01N21/21 ,  H04N5/359

    Abstract: An influence of a reflected image included in an infrared light image is reduced. An image pickup unit (20) includes an image pickup element (21) including an infrared light image-image pickup region (21a) and a visible light image-image pickup region (21b) and a polarizing filter (25) in which a plurality of polarizing units including a plurality of polarizing elements (25a to 25d) having principal axes different from each other are associated with a plurality of pixels forming the infrared light image-image pickup region and are arranged two-dimensionally.

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