-
公开(公告)号：US20170294554A1
公开(公告)日：2017-10-12
申请号：US15511750
申请日：2015-08-31
Applicant: Sharp Kabushiki Kaisha
Inventor： Yoshihiko TANI , Tetsuya HANAMOTO , Masanori WATANABE , Akihiro KURISU , Katsuji IGUCHI , Hiroyuki KASHIHARA , Tomoya INOUE , Toshiaki ASAI , Hirotaka WATANABE
CPC classification number: H01L33/04 , H01L21/205 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/24 , H01L33/32
Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.
-
公开(公告)号：US20140184056A1
公开(公告)日：2014-07-03
申请号：US14176442
申请日：2014-02-10
Applicant: SHARP KABUSHIKI KAISHA
Inventor： Tetsuya HANAMOTO , Masatsugu MASUDA , Kenji TERASHIMA
IPC: H01L33/50
CPC classification number: H01L33/502 , C01B21/0826 , C01P2004/54 , C01P2004/61 , C01P2006/60 , C04B35/597 , C04B2235/3224 , C04B2235/5296 , C04B2235/5436 , C04B2235/767 , C04B2235/9646 , C09K11/0883 , C09K11/7734 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , Y10T428/2982 , H01L2924/00014 , H01L2924/00012
Abstract: Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles each of which is a β-type SiAlON substantially represented by a general formula: EuaSibAlcOdNe, where 0.005≦a≦0.4, b+c=12, d+e=16, wherein 60% or more of the phosphor particle group is composed of the phosphor particles in which a value obtained by dividing a longer particle diameter by a shorter particle diameter is greater than 1.0 and not greater than 3.0. A high-efficiency and stable light emitting apparatus using a β-type SiAlON, which includes a light converter using the phosphor particle group, and a phosphor particle group therefor are also provided.
Abstract translation: 本发明提供一种二价铕活化氮氧化物绿色发光荧光体颗粒的荧光体颗粒，其各自为基本上由通式：EuaSibAlcOdNe表示的“SiAlON”，其中0.005≤n1E; a＆nlE; 0.4，b + c = 12， d + e = 16，其中，荧光体粒子群的60％以上由荧光体粒子构成，其中通过将更长的粒径除以更短的粒径而获得的值大于1.0且不大于3.0。 还提供了一种使用包含使用荧光体颗粒基团的光转换器和其荧光体粒子群的“SiAlON”的高效稳定的发光装置。
-
公开(公告)号：US20190006555A1
公开(公告)日：2019-01-03
申请号：US16101559
申请日：2018-08-13
Applicant: Sharp Kabushiki Kaisha
Inventor： Yoshihiko TANI , Tetsuya HANAMOTO , Masanori WATANABE , Akihiro KURISU , Katsuji IGUCHI , Hiroyuki KASHIHARA , Tomoya INOUE , Toshiaki ASAI , Hirotaka WATANABE
CPC classification number: H01L33/04 , H01L21/205 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/24 , H01L33/32
Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.
-
-
Search Results
3
records
(took 0.012 seconds)
