公开(公告)号：US20240321563A1

公开(公告)日：2024-09-26

申请号：US18612641

申请日：2024-03-21

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Shigeki MATSUNAKA ,  Ivan Petrov GANACHEV ,  Yoji TAKIZAWA ,  Hiroshi OOTSUKA

IPC: H01J37/32 ,  C23C14/06 ,  C23C14/34 ,  C23C14/50 ,  H01J37/34

CPC classification number: H01J37/32834 ,  C23C14/0617 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32715 ,  H01J37/32899 ,  H01J37/3426 ,  H01J2237/20214 ,  H01J2237/332 ,  H01J2237/3387

Abstract: A film forming apparatus includes: a rotary table provided in a chamber; a processing unit configured to perform plasma processing on a workpiece transferred by the rotary table; an inner wall configured to define a processing space and having an opening facing the rotary table; an outer wall configured to cover a periphery of the inner wall with a gap, and configured to form an exhaust space having an opening facing the rotary table; and an exhaust port connected to an exhaust device, wherein the processing unit is a film forming part configured to form a film by sputtering, and wherein both ends of the outer wall are in contact with a side surface of the chamber, and a portion of an outer periphery of the inner wall and the side surface of the chamber are partitioned, so that a reaction gas does not circulate in the exhaust space.

公开(公告)号：US20230407458A1

公开(公告)日：2023-12-21

申请号：US18337764

申请日：2023-06-20

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yoji TAKIZAWA ,  Masatoshi HIGUCHI

IPC: C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/06 ,  C23C14/58 ,  H01J37/34 ,  H01J37/32

CPC classification number: C23C14/34 ,  C23C14/505 ,  C23C14/541 ,  C23C14/0641 ,  C23C14/586 ,  H01J37/3411 ,  H01J37/32724

Abstract: A film formation apparatus includes: a chamber which an interior thereof can be made vacuum; a rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory; a film formation unit including a target formed of film formation material and a plasma generator which turns sputtering gas introduced between the target and the rotary table into plasma, the film formation unit depositing by sputtering film formation material on the workpiece; a film processing unit processing the film deposited by the film formation unit on the workpiece; holding regions each holding the workpiece and provided in a circular film formation region facing the film formation unit and the film processing unit that is a region other than the rotation axis in the rotary table; and a heater provided in the holding regions.