FILM FORMATION APPARATUS AND FILM FORMATION METHOD

    公开(公告)号:US20230366077A1

    公开(公告)日:2023-11-16

    申请号:US18029054

    申请日:2021-09-15

    Abstract: According to an embodiment, a film formation apparatus and a film formation method that can form GaN film with high productivity are provided. The film formation apparatus includes: the chamber which an interior thereof can be made vacuum; the rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory, a GaN film formation processing unit including a target formed of film formation material containing GaN and a plasma generator which turns sputtering gas introduced between the target and the rotary table into plasma, the GaN film formation processing unit depositing by sputtering particles of the film formation material containing GaN on the workpiece circulated and transported by the rotary table; and a nitriding processing unit nitriding particles of the film formation material deposited on the workpiece circulated and transported by the rotary table in the GaN film formation processing unit.

    ELECTROMAGNETIC WAVE ATTENUATOR, ELECTRONIC DEVICE, FILM FORMATION APPARATUS, AND FILM FORMATION METHOD

    公开(公告)号:US20210305171A1

    公开(公告)日:2021-09-30

    申请号:US17205098

    申请日:2021-03-18

    Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

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