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1.发明申请PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS 有权光电发生器，化学放大电阻组合物和图案处理公开(公告)号：US20160004155A1
公开(公告)日：2016-01-07
申请号：US14728620
申请日：2015-06-02
CPC分类号： G03F7/0045 , G03F1/20 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/09 , G03F7/11 , G03F7/2041 , G03F7/2053 , G03F7/2059 , G03F7/30 , G03F7/38
摘要： A photo acid generator represented (1a), wherein R01 and R02 each independently represent a linear monovalent hydrocarbon group having 1 to 20 carbon atoms or a branched or cyclic monovalent hydrocarbon group having 3 to 20 carbon atoms which may be substituted with or interposed by a heteroatom; R03 represents a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group having 3 to 30 carbon atoms which may be substituted with a heteroatom, or interposed by a heteroatom; and R01 and R02 may be mutually bonded to form a ring together with the sulfur atom in the formula. A photo acid generator can give a pattern excellent in resolution and LER and having a rectangular profile in the photolithography using a high energy beam like ArF excimer laser light, EUV, and electron beam as a light source.
摘要翻译： 代表（1a）的光酸反应器，其中R01和R02各自独立地表示碳原子数1〜20的直链一价烃基或碳原子数3〜20的支链或环状一价烃基，可以被 杂原子 R03表示碳原子数1〜30的直链状二价烃基或可以被杂原子取代或被杂原子置换的碳原子数3〜30的支链状或环状的二价烃基， R01和R02可以相互键合，与式中的硫原子一起形成环。 光致酸发生器可以使用高能束如ArF准分子激光，EUV和电子束作为光源，给出分辨率和LER优异的图案，并且在光刻中具有矩形轮廓。
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公开(公告)号：US20210200083A1
公开(公告)日：2021-07-01
申请号：US17198575
申请日：2021-03-11
发明人： Teppei ADACHI , Shinya YAMASHITA , Masaki OHASHI , Tomohiro KOBAYASHI , Kenichi OIKAWA , Takayuki FUJIWARA
IPC分类号： G03F7/004 , G03F7/039 , C07D493/18 , C08F220/18 , G03F7/11 , C07D327/04 , G03F7/038 , C07D307/93 , C07C381/12
摘要： A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
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公开(公告)号：US20230280651A1
公开(公告)日：2023-09-07
申请号：US18197244
申请日：2023-05-15
发明人： Teppei ADACHI , Shinya YAMASHITA , Masaki OHASHI , Tomohiro KOBAYASHI , Kenichi OIKAWA , Takayuki FUJIWARA
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/11 , C07D307/93 , C07D493/18 , C07D327/04 , C08F220/18 , C07C381/12
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0397 , G03F7/11 , C07D307/93 , C07D493/18 , C07D327/04 , C08F220/1807 , C08F220/1808 , C07C381/12 , G03F7/2006
摘要： A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
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