公开(公告)号：US20230230926A1

公开(公告)日：2023-07-20

申请号：US17928818

申请日：2021-05-26

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Tsuyoshi OHTSUKI ,  Hiroshi TAKENO

IPC分类号： H01L23/538 ,  H01L23/48 ,  H01L21/48 ,  H01L21/768

CPC分类号： H01L23/5385 ,  H01L23/481 ,  H01L21/486 ,  H01L21/76898

摘要： A method for producing a semiconductor apparatus capable of producing a semiconductor apparatus with improved transmission loss characteristic using an interposer substrate in which semiconductor devices formed on a silicon single crystal substrate are connected to each other by a through electrode, the method including: a step of providing the silicon single crystal substrate containing a dopant; a step of forming the semiconductor devices and the through electrode on the silicon single crystal substrate to obtain the interposer substrate; and a step of irradiating a particle beam to at least around a formation part for the through electrode on the silicon single crystal substrate to deactivate the dopant in a region around the formation part for the through electrode.

公开(公告)号：US20180247830A1

公开(公告)日：2018-08-30

申请号：US15544359

申请日：2016-01-07

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Katsuyoshi SUZUKI ,  Hiroshi TAKENO ,  Koji EBARA

IPC分类号： H01L21/322 ,  C30B15/00 ,  C30B29/06 ,  C30B33/02

CPC分类号： H01L21/3225 ,  C30B15/00 ,  C30B29/06 ,  C30B33/02 ,  C30B33/12 ,  H01L21/26 ,  H01L21/322

摘要： A method for manufacturing a silicon wafer having a denuded zone in a surface layer by performing a heat treatment to a silicon wafer, including: a step A, performing a first rapid heat treatment of 0.01 msec or more and 100 msec or less to an upper surface layer alone of the silicon wafer to be treated at 1300° C. or more and a silicon melting point or less by using a first heat source which heats the silicon wafer to be treated from above; and a step B, holding the silicon wafer to be treated at 1100° C. or more and less than 1300° C. for one second or more and 100 seconds or less by a second rapid heat treatment using a second heat source which heats the silicon wafer to be heated, and decreasing the temperature at a falling rate of 30° C./sec or more and 150° C./sec or less.

公开(公告)号：US20160351415A1

公开(公告)日：2016-12-01

申请号：US15117269

申请日：2015-01-26

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： Tsuyoshi OHTSUKI ,  Hiroshi TAKENO

IPC分类号： H01L21/324 ,  H01L29/36 ,  H01L29/32 ,  H01L21/265 ,  H01L21/268

CPC分类号： H01L21/3242 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/2686 ,  H01L29/32 ,  H01L29/36

摘要： A semiconductor substrate for flash lamp anneal is used in a manufacturing process of performing ion implantation to form a p-n junction on a semiconductor substrate surface and recovering an ion implantation defect by the flash lamp anneal, carbon concentration of the semiconductor substrate being 0.5 ppma or less. Consequently, it is possible to provide the semiconductor substrate for flash lamp anneal which can easily and surely prevent the ion implantation defect from remaining in a device using a flash lamp anneal process.

摘要翻译： 用于闪光灯退火的半导体衬底用于执行离子注入以在半导体衬底表面上形成pn结的制造工艺，并通过闪光灯退火来恢复离子注入缺陷，半导体衬底的碳浓度为0.5ppma以下 。 因此，可以提供用于闪光灯退火的半导体衬底，其可以容易且可靠地防止离子注入缺陷残留在使用闪光灯退火工艺的器件中。

公开(公告)号：US20230276716A1

公开(公告)日：2023-08-31

申请号：US18014221

申请日：2021-05-26

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Tsuyoshi OHTSUKI ,  Hiroshi TAKENO

IPC分类号： H10N60/01

CPC分类号： H10N60/0884 ,  H01P3/003

摘要： A method produces a semiconductor apparatus for a quantum computer. The apparatus includes: a semiconductor substrate; a quantum computer device formed on the semiconductor substrate; and a peripheral circuit formed on the semiconductor substrate and connected to the quantum computer device. The apparatus is to be used as a quantum computer. The method includes: a step of forming the quantum computer device and the peripheral circuit on the semiconductor substrate; and a step of deactivating a carrier in the semiconductor substrate by irradiation of a particle beam to at least a formation part for the quantum computer device and a formation part for the peripheral circuit in the semiconductor substrate. The method for producing a semiconductor apparatus for a quantum computer can produce a semiconductor apparatus for a quantum computer having excellent 3HD characteristics.

公开(公告)号：US20190267239A1

公开(公告)日：2019-08-29

申请号：US16318223

申请日：2017-07-03

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Tsuyoshi OHTSUKI ,  Tadashi NAKASUGI ,  Hiroshi TAKENO ,  Katsuyoshi SUZUKI

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L29/78 ,  H01L21/02

摘要： A method for manufacturing a semiconductor device, including forming a Fin structure on a semiconductor silicon substrate, performing ion implantation into the Fin structure, and subsequently performing recovery heat treatment on the semiconductor silicon substrate to recrystallize silicon of the Fin structure, wherein the Fin structure is processed so as not to have an end face of a {111} plane of the semiconductor silicon onto a sidewall of the Fin structure to be formed. It also includes a method for manufacturing a semiconductor device that is capable of preventing a defect from being introduced into a Fin structure when the Fin structure is subjected to ion implantation and recovery heat treatment.

公开(公告)号：US20160365293A1

公开(公告)日：2016-12-15

申请号：US15117537

申请日：2015-02-23

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Tsuyoshi OHTSUKI ,  Hiroshi TAKENO

IPC分类号： H01L21/66 ,  H01L21/324 ,  H01L21/322 ,  G01N23/225

CPC分类号： H01L22/24 ,  G01N23/2254 ,  G01N2223/3106 ,  G01N2223/6116 ,  H01L21/26513 ,  H01L21/2686 ,  H01L21/322 ,  H01L21/324 ,  H01L22/12

摘要： The present invention provides a method for evaluating a semiconductor substrate subjected to a defect recovery heat treatment to recover a crystal defect in the semiconductor substrate having the crystal defect, flash lamp annealing is performed as the defect recovery heat treatment, and the method includes steps of measuring the crystal defect in the semiconductor substrate, which is being recovered, by controlling treatment conditions for the flash lamp annealing and analyzing a recovery mechanism of the crystal defect on the basis of a result of the measurement. Consequently, the method for evaluating a semiconductor substrate which enables evaluating a recovery process of the crystal defect is provided.

摘要翻译： 本发明提供一种用于评价进行缺陷恢复热处理的半导体衬底的方法，以恢复具有晶体缺陷的半导体衬底中的晶体缺陷，进行闪光灯退火作为缺陷恢复热处理，并且该方法包括以下步骤： 通过控制闪光灯退火的处理条件和基于测量结果分析晶体缺陷的恢复机制来测量正在回收的半导体衬底中的晶体缺陷。 因此，提供了能够评价晶体缺陷的恢复处理的半导体基板的评价方法。