公开(公告)号：US20150345046A1

公开(公告)日：2015-12-03

申请号：US14655827

申请日：2013-12-11

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke MUTO ,  Yusuke KIMURA ,  Tomoya UTASHIRO ,  Seiichi TAKAHASHI ,  Kenji MOMOSE ,  Hisanori KURIBAYASHI ,  Naoki YASUDA

IPC: C30B25/08 ,  C30B25/10 ,  C30B29/36 ,  C30B25/20

CPC classification number: C30B25/08 ,  C23C16/325 ,  C23C16/45502 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/463 ,  C30B25/10 ,  C30B25/14 ,  C30B25/20 ,  C30B29/36

Abstract: A CVD device equipped with a container chamber (100) having an interior space (100a), and containing a substrate in a manner such that the film formation surface thereof faces upward from the bottom side (fifth region (A5)) of the interior space (100a). Silane gas and propane gas are supplied to the interior space (100a). A stainless-steel ceiling (120) is provided on the top of the interior space (100a). The ceiling (120) is provided with first through third partition members (171-173) attached thereto which comprise stainless steel, are positioned so as to extend in the -Z-direction and transect the X-direction, and divide the top side of the interior space (100a) into first through fourth regions (A1-A4). The substrate positioned inside the interior space (100a) is heated to 1600° C. The first through third partition members (171-173) and the ceiling (120) are cooled to 300° C. or lower by a cooling mechanism.

Abstract translation: 一种装备有具有内部空间（100a）的容器室（100）的CVD装置，并且以使其成膜表面从内部空间的底侧（第五区域（A5））向上方的方式包含基板 （100a）。 硅烷气体和丙烷气体被供应到内部空间（100a）。 在内部空间（100a）的顶部设置有不锈钢天花板（120）。 天花板（120）设置有附接到其上的第一至第三分隔构件（171-173），其包括不锈钢，定位成沿-Z方向延伸并横切X方向，并且将 所述内部空间（100a）进入第一至第四区域（A1-A4）。 将位于内部空间（100a）内的基板加热至1600℃。通过冷却机构将第一至第三分隔部件（171-173）和顶板（120）冷却至300℃以下。