公开(公告)号：US20160208414A1

公开(公告)日：2016-07-21

申请号：US14913865

申请日：2014-08-13

Applicant: SHOWA DENKO K.K.

Inventor： Michiya ODAWARA ,  Yutaka TAJIMA ,  Daisuke MUTO ,  Kenji MOMOSE

IPC: C30B25/18 ,  H01L21/02 ,  C30B29/36

CPC classification number: C30B25/186 ,  C23C16/325 ,  C23C16/4404 ,  C30B25/08 ,  C30B25/12 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

Abstract: The method for producing an SiC epitaxial wafer according to the present invention includes: a step of vacuum baking a coated carbon-based material member at a degree of vacuum of 2.0×10−3 Pa or less in a dedicated vacuum baking furnace; a step of installing the coated carbon-based material member in an epitaxial wafer manufacturing apparatus; and a step of placing an SiC substrate in the epitaxial wafer manufacturing apparatus and epitaxially growing an SiC epitaxial film on the SiC substrate.

Abstract translation: 本发明的SiC外延片的制造方法包括：在专用的真空烘烤炉中以2.0×10 -3 Pa以下的真空度对涂布的碳系材料进行真空烘烤的工序; 将涂布的碳基材料部件安装在外延晶片制造装置中的步骤; 以及将SiC衬底放置在外延晶片制造装置中并在SiC衬底上外延生长SiC外延膜的步骤。

公开(公告)号：US20140339571A1

公开(公告)日：2014-11-20

申请号：US14447137

申请日：2014-07-30

Applicant: SHOWA DENKO K.K.

Inventor： Kenji MOMOSE ,  Yutaka TAJIMA ,  Yasuyuki SAKAGUCHI ,  Michiya ODAWARA ,  Yoshihiko MIYASAKA

IPC: H01L29/06 ,  H01L29/16

CPC classification number: H01L29/0684 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/1608

Abstract: A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is 5 mm−1 or less.

Abstract translation: 通过在以0.4°〜5°的偏角倾斜的4H-SiC单晶基板上形成SiC外延层而获得的SiC外延片，其中连接到浅凹坑的步进串联的线密度为 由于SiC外延片中的螺旋位错为5mm-1以下。