公开(公告)号：US20230055999A1

公开(公告)日：2023-02-23

申请号：US17981138

申请日：2022-11-04

申请人： SHOWA DENKO K.K.

发明人： Yoshitaka Nishihara ,  Keisuke Fukada

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L29/36 ,  C30B25/02 ,  C30B29/36 ,  C30B25/20

摘要： A method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a SiC single crystal substrate, the method including identifying a total number of large-pit defects caused by micropipes in the SiC single crystal substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, using microscopic and photoluminescence images. Also disclosed is a method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a single crystal substrate, the method including identifying locations of the large-pit defects caused by micropipes in the SiC single crystal substrate and the large-pit defects caused by substrate carbon inclusions in the SiC epitaxial layer, using microscopic and photoluminescence images.

公开(公告)号：US10985079B2

公开(公告)日：2021-04-20

申请号：US16672650

申请日：2019-11-04

申请人： SHOWA DENKO K.K.

发明人： Yoshitaka Nishihara

IPC分类号： H01L21/66 ,  H01L21/02

摘要： The invention provides a method of manufacturing a SiC epitaxial wafer in which stacking faults are less likely to occur when a current is passed in a forward direction. The method of manufacturing the SiC epitaxial wafer includes a measurement step for measuring a basal plane dislocation density, a layer structure determining process for determining the layer structure of the epitaxial layer, and an epitaxial growth step for growing the epitaxial layers. And in the layer structure determination step, in the case of (i) when the basal plane dislocation density is lower than a predetermined value, the epitaxial layer includes a conversion layer and a drift layer from the SiC substrate side; and in the case of (ii) when the density is equal to or higher than the predetermined value, the epitaxial layer includes a conversion layer, a recombination layer, and a drift layer from the SiC substrate side.

公开(公告)号：US10985042B2

公开(公告)日：2021-04-20

申请号：US16599645

申请日：2019-10-11

申请人： SHOWA DENKO K.K.

发明人： Yoshitaka Nishihara ,  Koji Kamei

IPC分类号： H01L21/02 ,  H01L21/67 ,  C30B29/06 ,  C30B29/36

摘要： A SiC substrate includes a first principal surface, a second principal surface disposed on a side opposite to the first principal surface, and an outer periphery connected to the first principal surface and the second principal surface, wherein a density of composite defects present at a peripheral edge portion of the SiC substrate, in which a hollow portion and a dislocation line extending from the hollow portion are connected to each other is equal to or greater than 0.01 pieces/cm2 and equal to or less than 10 pieces/cm2.

公开(公告)号：US20220223482A1

公开(公告)日：2022-07-14

申请号：US17707743

申请日：2022-03-29

申请人： SHOWA DENKO K.K.

发明人： Yoshitaka Nishihara ,  Koji Kamei

IPC分类号： H01L21/66 ,  C30B29/00 ,  G01N21/64 ,  G01N21/95 ,  H01L21/02

摘要： A SiC epitaxial wafer including a high-concentration epitaxial layer having an impurity concentration of 1×1018 cm−3 or more, and the number or positions of basal plane dislocations included in the high-concentration epitaxial layer have been identified

公开(公告)号：US11315839B2

公开(公告)日：2022-04-26

申请号：US16207396

申请日：2018-12-03

申请人： SHOWA DENKO K.K.

发明人： Yoshitaka Nishihara ,  Koji Kamei

IPC分类号： H01L21/02 ,  H01L21/66 ,  C30B29/00 ,  G01N21/64 ,  G01N21/95 ,  G01N21/84

摘要： An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1×1018 cm−3 or more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1×1018 cm−3 or more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.

公开(公告)号：US10697898B2

公开(公告)日：2020-06-30

申请号：US16598486

申请日：2019-10-10

申请人： SHOWA DENKO K.K.

发明人： Yoshitaka Nishihara ,  Koji Kamei

IPC分类号： G01N21/88 ,  H01L29/16

摘要： In a SiC substrate evaluation method, a bar-shaped stacking fault is observed by irradiating a surface of a SiC substrate before stacking an epitaxial layer with excitation light and extracting light having a wavelength range from equal to or greater than 405 nm and equal to or less than 445 nm among photoluminescence light beams emitted from the first surface.