Patent search ap:("SIEMENS AG") AND inv:"RICHARD WIESNER" Page 1

1.

发明授权
Method for producing a p-n junction in a monocrystalline semiconductor member by etching and diffusion 失效
Title translation: 通过蚀刻和扩散在单晶半导体部件中制造p-n结的方法

公开(公告)号：US3375146A

公开(公告)日：1968-03-26

申请号：US38304064

申请日：1964-07-16

Applicant: SIEMENS AG

Inventor： RICHARD WIESNER

IPC: C30B25/02 , H01L21/00 , H01L29/00

CPC classification number: H01L21/00 , C30B25/02 , H01L29/00 , Y10S438/923

2.

发明授权
Voltage-sensitive variable p-n junction capacitor with intermediate control zone 失效
Title translation: 具有中间控制区的电压敏感可变p-n结电容器

公开(公告)号：US3411053A

公开(公告)日：1968-11-12

申请号：US54032166

申请日：1966-04-05

Applicant: SIEMENS AG

Inventor： RICHARD WIESNER

IPC: H01L29/00 , H01L29/93 , H03F3/04

CPC classification number: H03F3/04 , H01L29/00 , H01L29/93 , Y10S438/901

3.

发明授权
Unipolar diffusion transistor 失效
Title translation: 单极扩散晶体管

公开(公告)号：US3152294A

公开(公告)日：1964-10-06

申请号：US85517159

申请日：1959-11-24

Applicant: SIEMENS AG

Inventor： KARL SIEBERTZ , RICHARD WIESNER

IPC: H01L21/00 , H01L21/22 , H01L21/24 , H01L21/334 , H01L29/00 , H01L29/02 , H01L29/06 , H01L29/40 , H01L29/76 , H01L29/80 , H03F99/00

CPC classification number: H01L29/80 , H01L21/00 , H01L21/22 , H01L21/24 , H01L29/00 , H01L29/02 , H01L29/06 , H01L29/40 , H01L29/66075 , H01L29/76 , H03F21/00

4.

发明授权
Unipolar diffusion transistor 失效
Title translation: 单极扩散晶体管

公开(公告)号：US3380154A

公开(公告)日：1968-04-30

申请号：US39545064

申请日：1964-09-10

Applicant: SIEMENS AG

Inventor： KARL SIEBERTZ , RICHARD WIESNER

IPC: H01L21/00 , H01L21/22 , H01L21/24 , H01L21/334 , H01L29/00 , H01L29/02 , H01L29/06 , H01L29/40 , H01L29/76 , H01L29/80 , H03F99/00

CPC classification number: H01L29/80 , H01L21/00 , H01L21/22 , H01L21/24 , H01L29/00 , H01L29/02 , H01L29/06 , H01L29/40 , H01L29/66075 , H01L29/76 , H03F21/00 , Y10S438/919

5.

发明授权
Method of producing a p-n junction in a monocrystalline semiconductor device 失效
Title translation: 在单晶半导体器件中制造p-n结的方法

公开(公告)号：US3260624A

公开(公告)日：1966-07-12

申请号：US19327062

申请日：1962-05-08

Applicant: SIEMENS AG

Inventor： RICHARD WIESNER

IPC: C30B25/02 , H01L21/00 , H01L29/00

CPC classification number: H01L21/00 , C30B25/02 , H01L29/00 , Y10S148/037 , Y10S148/039 , Y10S148/049 , Y10S148/151 , Y10S438/919 , Y10S438/923

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