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1.
公开(公告)号:US3274667A
公开(公告)日:1966-09-27
申请号:US22397662
申请日:1962-09-17
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ
IPC: H01L21/607
CPC classification number: H01L24/80 , H01L24/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/12036 , H01L2224/48 , H01L2924/2075 , H01L2924/20751 , H01L2924/00015 , H01L2224/05599 , H01L2924/00
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2.Method for remelting a rod of crystallizable material by crucible-free zonemelting 失效
Title translation: 通过无坩埚的分子束重熔可结晶材料棒的方法公开(公告)号:US3234012A
公开(公告)日:1966-02-08
申请号:US1330960
申请日:1960-03-07
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ , HEINZ HENKER
CPC classification number: C30B13/28 , C30B13/16 , C30B13/26 , C30B13/32 , C30B15/002 , C30B15/02 , C30B15/30 , Y10S117/901 , Y10S117/91 , Y10S117/917 , Y10T117/1036 , Y10T117/1076
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3.Method and device for the successive zone melting and resolidifying of extremely pure substances 失效
Title translation: 用于连续区域熔化和重新固化极纯物质的方法和装置公开(公告)号:US3234009A
公开(公告)日:1966-02-08
申请号:US20901662
申请日:1962-07-11
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ
CPC classification number: C30B13/28 , C30B13/16 , C30B13/26 , C30B13/32 , Y10S117/901 , Y10S117/917 , Y10T117/1076 , Y10T117/1084
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4.Method of making contacts to a semiconductor using a comb-like intermediary 失效
Title translation: 使用梳状中间体与半导体接触的方法公开(公告)号:US3264715A
公开(公告)日:1966-08-09
申请号:US20655762
申请日:1962-06-28
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ
IPC: H01L21/00 , H01L23/488 , H01L23/495
CPC classification number: H01L23/49562 , H01L21/00 , H01L23/488 , H01L23/49548 , H01L2924/0002 , Y10T29/49101 , Y10T29/49121 , H01L2924/00
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公开(公告)号:US2204999A
公开(公告)日:1940-06-18
申请号:US17865037
申请日:1937-12-08
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ
IPC: H01J43/20
CPC classification number: H01J43/20
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公开(公告)号:US2187184A
公开(公告)日:1940-01-16
申请号:US17491737
申请日:1937-11-17
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ
IPC: H01J43/20
CPC classification number: H01J43/20
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公开(公告)号:US3380154A
公开(公告)日:1968-04-30
申请号:US39545064
申请日:1964-09-10
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ , RICHARD WIESNER
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公开(公告)号:US2164595A
公开(公告)日:1939-07-04
申请号:US17431437
申请日:1937-11-13
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ
IPC: H01J9/12
CPC classification number: H01J9/12 , H01J2201/32 , H01J2201/34
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9.Method of producing an electric contact with a semiconductor device 失效
Title translation: 用半导体器件制造电接点的方法公开(公告)号:US3184831A
公开(公告)日:1965-05-25
申请号:US15067361
申请日:1961-11-07
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ
IPC: H01L21/00 , H01L21/60 , H01L21/607 , H05K3/32
CPC classification number: H05K3/328 , H01L21/00 , H01L24/80 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/10157 , H05K2203/0495
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公开(公告)号:US3152294A
公开(公告)日:1964-10-06
申请号:US85517159
申请日:1959-11-24
Applicant: SIEMENS AG
Inventor: KARL SIEBERTZ , RICHARD WIESNER
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