公开(公告)号：US20240363314A1

公开(公告)日：2024-10-31

申请号：US18647944

申请日：2024-04-26

申请人： SK enpulse Co., Ltd.

发明人： Jong Kyu LEE ,  Hyun Soo LEE ,  Il Gu YONG ,  Do Hyun CHOI ,  Ho Geun HAN

IPC分类号： H01J37/32

CPC分类号： H01J37/32541 ,  C23C16/45565

摘要： An embodiment of the present disclosure provides an upper electrode including a flat upper surface; a lower surface facing the upper surface; and a thickness from the upper surface to the lower surface, wherein the lower surface includes a first profile corresponding to the central area of the lower surface and having a first thickness change rate of −0.1 to 0; a third profile surrounding the first profile and having a third thickness change rate of −0.115 to −0.122; and a fifth profile surrounding the third profile and having a fifth thickness change rate of −0.003 to 0.003, wherein the first thickness change rate, the third thickness change rate, and the fifth thickness change rate are values obtained by dividing a change in thickness by a change in radius along a horizontal direction parallel to the upper surface from a center of the lower surface.

公开(公告)号：US20240170266A1

公开(公告)日：2024-05-23

申请号：US18512021

申请日：2023-11-17

申请人： SK enpulse Co., Ltd.

发明人： Hyun Soo LEE ,  Hae Mi KANG ,  Do Hyun CHOI ,  Il Gu YONG ,  Jong Kyu LEE ,  Ho Geun HAN ,  Ju Young SONG

IPC分类号： H01J37/32 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01J37/32642 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/6831 ,  H01L21/68735 ,  H01J2237/2007 ,  H01J2237/334

摘要： The present invention provides a component for a semiconductor device fabrication apparatus, a semiconductor device fabrication apparatus including the same, and a method of fabricating a semiconductor device, wherein the component includes single-crystal silicon, wherein, on at least one surface thereof, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.