公开(公告)号：US20140160839A1

公开(公告)日：2014-06-12

申请号：US14183193

申请日：2014-02-18

Applicant: SK hynix Inc.

Inventor： Myoung Sub KIM ,  Soo Gil KIM ,  Nam Kyun PARK ,  Sung Cheoul KIM ,  Gap Sok DO ,  Joon Seop SIM ,  Hyun Jeong LEE

IPC: G11C13/00

CPC classification number: H01L45/1675 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144

Abstract: A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

公开(公告)号：US20140162429A1

公开(公告)日：2014-06-12

申请号：US14183161

申请日：2014-02-18

Applicant: SK hynix Inc.

Inventor： Myoung Sub KIM ,  Soo Gil KIM ,  Nam Kyun PARK ,  Sung Cheoul KIM ,  Gap Sok DO ,  Joon Seop SIM ,  Hyun Jeong LEE

IPC: H01L45/00

CPC classification number: H01L45/1675 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144

Abstract: A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

Abstract translation: 提供了一种半导体集成电路器件及其制造方法及其驱动方法。 该器件包括半导体衬底，从半导体衬底的表面延伸的上电极; 多个开关结构，其从与上述半导体基板的表面平行的方向从上述电极的两侧延伸;以及相变材料层，设置在上述多个开关结构体和上部电极之间。