公开(公告)号：US20140162429A1

公开(公告)日：2014-06-12

申请号：US14183161

申请日：2014-02-18

Applicant: SK hynix Inc.

Inventor： Myoung Sub KIM ,  Soo Gil KIM ,  Nam Kyun PARK ,  Sung Cheoul KIM ,  Gap Sok DO ,  Joon Seop SIM ,  Hyun Jeong LEE

IPC: H01L45/00

CPC classification number: H01L45/1675 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144

Abstract: A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

Abstract translation: 提供了一种半导体集成电路器件及其制造方法及其驱动方法。 该器件包括半导体衬底，从半导体衬底的表面延伸的上电极; 多个开关结构，其从与上述半导体基板的表面平行的方向从上述电极的两侧延伸;以及相变材料层，设置在上述多个开关结构体和上部电极之间。

公开(公告)号：US20150255717A1

公开(公告)日：2015-09-10

申请号：US14716643

申请日：2015-05-19

Applicant: SK hynix Inc.

Inventor： Nam Kyun PARK ,  Gap Sok DO

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/16 ,  G11C11/16 ,  G11C11/1657 ,  G11C11/1659 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/0016 ,  G11C17/16 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2454 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

Abstract: Provided are a variable resistive memory device, and methods of fabricating and driving the same. The variable resistive memory device includes a plurality of memory cells arranged in a first direction and in a second direction different from the first direction, each of the plurality of memory cells comprising a variable resistor and a selection device serially connected W the variable resistor. A common wiring is electrically connected to first ends of the plurality of memory cells to apply a common reference voltage, Each wiring line of a plurality of wiring lines is electrically connected to second ends of the plurality of memory cells arranged n the plurality of rows oriented in the first direction. A plurality of selection lines are respectively connected to the selection devices of the plurality of memory cells to select any one of the plurality of memory cells via the plurality of wiring lines.

Abstract translation: 提供了一种可变电阻存储器件，以及制造和驱动它的方法。 可变电阻式存储器件包括沿与第一方向不同的第一方向和第二方向布置的多个存储单元，多个存储单元中的每一个包括可变电阻器和串联连接可变电阻器W的选择器件。 公共布线电连接到多个存储单元的第一端以施加公共参考电压。多个布线的每个布线与多个存储单元中的多个列排列的多个存储单元的第二端电连接 在第一个方向。 多个选择线分别连接到多个存储单元的选择装置，以经由多条布线选择多个存储单元中的任一个。

公开(公告)号：US20140160839A1

公开(公告)日：2014-06-12

申请号：US14183193

申请日：2014-02-18

Applicant: SK hynix Inc.

Inventor： Myoung Sub KIM ,  Soo Gil KIM ,  Nam Kyun PARK ,  Sung Cheoul KIM ,  Gap Sok DO ,  Joon Seop SIM ,  Hyun Jeong LEE

IPC: G11C13/00

CPC classification number: H01L45/1675 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144

Abstract: A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

公开(公告)号：US20130223124A1

公开(公告)日：2013-08-29

申请号：US13766593

申请日：2013-02-13

Applicant: SK hynix Inc.

Inventor： Nam Kyun PARK ,  Gap Sok DO

IPC: G11C13/00 ,  G11C11/16 ,  G11C17/16 ,  H01L45/00

CPC classification number: H01L45/16 ,  G11C11/16 ,  G11C11/1657 ,  G11C11/1659 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/0016 ,  G11C17/16 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2454 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

Abstract: Provided are a variable resistive memory device, and methods of fabricating and driving the same. The variable resistive memory device includes a plurality of memory cells arranged in a first direction and in a second direction different from the first direction, each of the plurality of memory cells comprising a variable resistor and a selection device serially connected to the variable resistor. A common wiring is electrically connected to first ends of the plurality of memory cells to apply a common reference voltage. Each wiring line of a plurality of wiring lines is electrically connected to second ends of the plurality of memory cells arranged n the plurality of rows oriented in the first direction. A plurality of selection lines are respectively connected to the selection devices of the plurality of memory cells to select any one of the plurality of memory cells via the plurality of wiring lines.

Abstract translation: 提供了一种可变电阻存储器件，以及制造和驱动它的方法。 可变电阻式存储器件包括沿第一方向和与第一方向不同的第二方向布置的多个存储器单元，多个存储单元中的每一个包括可变电阻器和串联连接到可变电阻器的选择器件。 公共布线电连接到多个存储单元的第一端以施加公共参考电压。 多条布线的各布线与多个沿着第一方向排列的行的多个存储单元的第二端电连接。 多个选择线分别连接到多个存储单元的选择装置，以经由多条布线选择多个存储单元中的任一个。