ADDRESS DECODING CIRCUIT AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
    4.
    发明申请
    ADDRESS DECODING CIRCUIT AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME 审中-公开
    地址解码电路和半导体器件,包括它们

    公开(公告)号:US20160111136A1

    公开(公告)日:2016-04-21

    申请号:US14586362

    申请日:2014-12-30

    Applicant: SK hynix Inc.

    Inventor: Kyeong Min CHAE

    CPC classification number: G11C8/10 G11C8/06 G11C8/18 G11C29/702

    Abstract: An address decoding circuit may include a main address processing block configured to latch a main address, and output a latched main address. The address decoding circuit may include a repair block configured to determine whether the main address corresponds to a failed region, and output a repair address and a repair signal according to a determination result. The address decoding circuit may include a synchronization block configured to synchronize the latched main address, the repair address and the repair signal with a synchronization signal, and output a synchronized main address, a synchronized repair address and a synchronized repair signal. The address decoding circuit may include a decoder configured to decode any one of the synchronized main address and the synchronized repair address in response to a decoding signal.

    Abstract translation: 地址解码电路可以包括主地址处理块,其被配置为锁存主地址,并输出锁存的主地址。 地址解码电路可以包括修复块,其被配置为确定主地址是否对应于故障区域,并且根据确定结果输出修复地址和修复信号。 地址解码电路可以包括同步块,其被配置为使锁存的主地址,修复地址和修复信号与同步信号同步,并输出同步的主地址,同步的修复地址和同步修复信号。 地址解码电路可以包括解码器,其被配置为响应于解码信号来解码同步主地址和同步修复地址中的任何一个。

    STORAGE DEVICE AND OPERATING METHOD THEREOF

    公开(公告)号:US20220253090A1

    公开(公告)日:2022-08-11

    申请号:US17365252

    申请日:2021-07-01

    Applicant: SK hynix Inc.

    Inventor: Kyeong Min CHAE

    Abstract: A memory device including a clock generator generating a data processing clock signal based on an external clock signal, and an input/output circuit performing a data transmission/reception operation of transmitting/receiving data to/from an external device based on the data processing clock signal, wherein the clock generator comprises a warm-up operation controller generating a warm-up enable signal for recognizing a portion of a period of the external clock signal as a dummy signal, and resetting the warm-up enable signal when a pause period where a toggle of the external clock signal is temporarily stopped is detected.

    CACHE BUFFER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME

    公开(公告)号:US20200057574A1

    公开(公告)日:2020-02-20

    申请号:US16380361

    申请日:2019-04-10

    Applicant: SK hynix Inc.

    Abstract: A cache buffer coupled to a page buffer includes: a first cache group and a second cache group corresponding to a first area and a second area of a memory cell array; a selector coupled to the first and second cache groups; and an input/output (I/O) controller coupled to the selector and configured to output data to the first and second cache groups or receive data input from the first and second cache groups. The selector: performs normal repair operation by transferring data received through a first data line to the first cache group and transferring data received through a second data line to the second cache group; performs cross repair operation by transferring data received through the first data line to the second cache group and transferring data received through the second data line to the first cache group.

    MEMORY DEVICE INCLUDING PIPE LATCH

    公开(公告)号:US20250124957A1

    公开(公告)日:2025-04-17

    申请号:US18436021

    申请日:2024-02-08

    Applicant: SK hynix Inc.

    Abstract: A pipeline system includes a first inverter latch configured to receive plural data entries, and plural second inverter latches coupled to each other in parallel for storing the plural data entries input from the first inverter latch in a distributive manner. Plural first switches are arranged between the first inverter latch and the plural second inverter latches, each first switch configured for controlling transmission of each of the plural data entries from the first inverter latch to one of the plural second inverter latches. Plural second switches are configured to output the plural data entries stored in the plural second inverter latches.

    MEMORY DEVICE AND MEMORY SYSTEM HAVING THE SAME

    公开(公告)号:US20200027510A1

    公开(公告)日:2020-01-23

    申请号:US16299590

    申请日:2019-03-12

    Applicant: SK hynix Inc.

    Abstract: The present disclosure relates to a memory device and a memory system having the same. The memory device includes page buffers arranged in a first direction and a second direction perpendicular to the first direction, a first storage group and a second storage group arranged adjacent to the page buffers in the second direction, and a switch circuit arranged between the first storage group and the second storage group and selectively coupling the first storage group and the second storage group to data lines according to a number of page buffers and a number of first and second storage groups.

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