Abstract:
This technology provides an image sensor and an electronic device including the same, In an image sensor including a pixel array including a plurality of unit pixels, each of the plurality of unit pixels may include a photoelectric conversion element and a pixel lens over the photoelectric conversion element and comprising a plurality of light condensing layers in which a lower layer has a larger area than an upper layer, wherein the pixel lens has a shape changing based on a position of a corresponding unit pixel from a center of the pixel array to an edge of the pixel array.
Abstract:
Provided are an image sensor, a method of manufacturing the image sensor, and an electronic device including the image sensor. An image sensor according to an embodiment may include a photoelectric conversion element, a pixel lens formed over the photoelectric conversion element and comprising a plurality of light condensing layers, wherein an upper layer of plurality of light condensing layers has a smaller area than a lower layer, and the pixel lens comprises a color filter substance.
Abstract:
An image sensor is provided. The image sensor may include a photodiode formed in a substrate; a light refraction pattern formed on the photodiode; a color filter covering the light refraction pattern; and a micro-lens formed on the color filter.
Abstract:
Disclosed is an image sensor having a plurality of groups of pixels, each group of pixels including: first to third image detection color filter sets and a phase difference detection color filter set, which are arranged in a matrix with rows and columns. The phase difference detection color filter set comprises first to fourth phase difference detection color filter pairs arranged in a matrix with rows and columns. The first to fourth phase difference detection color filter pairs comprise first to fourth left phase difference detection color filters positioned on the left of each of the first to fourth phase difference detection color filter pairs and first to fourth right phase difference detection color filters positioned on the right of each of the first to fourth phase difference detection color filter pairs, respectively.
Abstract:
An image sensor image sensor may include: a substrate; photo-sensing elements formed in the substrate, each photo-sensing element responsive to light to produce a photo-sensing electrical signal; an antireflection layer formed over of the photo-sensing elements and structured to reduce optical reflection to facilitate optical transmission of incident light to the photo-sensing elements through the antireflection layer; color filters formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, each color filter structured to select a designated color in the incident light to transmit through to a corresponding photo-sensing element; and partition patterns formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, to partition light receiving area above the photo-sensing elements into separate light receiving areas, each partition pattern surrounding a corresponding color filter to be separate from an adjacent color filter; grooves formed in upper portions of the partition patterns, and providing air gaps between the adjacent partition patterns; micro lenses formed over the partition patterns and the color filters to direct incident light to the photo-sensing elements through the color filters, respectively. The micro lenses may be separated from one another by the grooves.
Abstract:
An image sensor image sensor may include: a substrate; photo-sensing elements formed in the substrate, each photo-sensing element responsive to light to produce a photo-sensing electrical signal; an antireflection layer formed over of the photo-sensing elements and structured to reduce optical reflection to facilitate optical transmission of incident light to the photo-sensing elements through the antireflection layer; color filters formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, each color filter structured to select a designated color in the incident light to transmit through to a corresponding photo-sensing element; and partition patterns formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, to partition light receiving area above the photo-sensing elements into separate light receiving areas, each partition pattern surrounding a corresponding color filter to be separate from an adjacent color filter; grooves formed in upper portions of the partition patterns, and providing air gaps between the adjacent partition patterns; micro lenses formed over the partition patterns and the color filters to direct incident light to the photo-sensing elements through the color filters, respectively. The micro lenses may be separated from one another by the grooves.
Abstract:
Disclosed are an image sensor including a light collection member having a multi-layer step shape and an electronic device including the same. This technology can improve light condensing efficiency in a unit pixel since a corresponding pixel lens is included. Furthermore, light condensing efficiency in a unit pixel can be improved more effectively by controlling the width of a corresponding pixel lens so that the pixel lens corresponds to the wavelength of incident light whose color has been separated by a corresponding color filter. As described above, quantum efficiency in the photoelectric conversion element can also be improved since light condensing efficiency in a unit pixel is improved. As a result, performance of the image sensor can be improved.
Abstract:
An image sensor may include: a substrate including a substrate comprising a photoelectric conversion element; a pixel lens formed over the substrate and comprising a plurality of light condensing layers in which a lower layer has a larger area than an upper layer; a color filter layer covering the pixel lens; and an anti-reflection structure formed over the color filter layer.